HER105G R1G Allicdata Electronics
Allicdata Part #:

HER105GR1G-ND

Manufacturer Part#:

HER105G R1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 400V 1A DO204AL
More Detail: Diode Standard 400V 1A Through Hole DO-204AL (DO-4...
DataSheet: HER105G R1G datasheetHER105G R1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03262
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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HER105G R1G is a rectifier diode, specifically manufactured to be used as a switching diode in high voltage, low current applications. It is commonly used for television and photographic equipment, and can also be used for low-power switching circuits such as computer monitors and power supplies. The HER105G R1G has a low forward voltage drop, low reverse leakage current and low turn-on switching speed. This makes it ideal for applications where speed, efficiency and reliability are required.

The HER105G R1G has a compact surface-mount design, making it easier to install and use in tight spaces. It has a maximum reverse voltage of 500 Volts and a maximum forward current of 0.5 Amps. The forward voltage drop of this diode is as low as 0.5 volts, so it is capable of supplying a continuous current of 0.5 Amps even when applied with 500 Volts. It also features a very fast switching speed, allowing it to switch between different levels of current quickly and accurately. The diode is designed to be very reliable, and has a long life span.

The working principle of the HER105G R1G diode is quite simple. It operates on the principle of p-n junction rectification. Basically, the diode consists of two layers of doped semiconductor material, which acts as a rectifier. The first layer has negative charges and the second layer has positive charges. When an electric current is applied to the junction, the negative charges from the first layer repel the positive charges from the second layer and prevent them from travelling in the opposite direction. This prevents the current from travelling in the wrong direction and allows it to flow in the correct direction.

The HER105G R1G diode is an ideal choice for high voltage, low current applications and switching circuits. Its low turn-on time and low forward voltage drop make it perfect for applications that require speed and efficiency, while its reliable design ensures a long lifespan and minimal maintenance. Overall, the HER105G R1G is a great choice for any application where speed, efficiency and reliability are essential.

The specific data is subject to PDF, and the above content is for reference

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