
Allicdata Part #: | HGT1S20N35G3VLS-ND |
Manufacturer Part#: |
HGT1S20N35G3VLS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 380V 20A 150W TO263AB |
More Detail: | IGBT 375V 20A 150W Surface Mount TO-263AB |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 150W |
Supplier Device Package: | TO-263AB |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 300V, 10A, 25 Ohm, 5V |
Td (on/off) @ 25°C: | -/15µs |
Gate Charge: | 28.7nC |
Input Type: | Logic |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 5V, 20A |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 375V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs have become increasingly popular in the last decade, due to their power and robustness. The HGT1S20N35G3VLS IGBT is no exception. This IGBT is used in a variety of applications, including renewable energy, industrial motors, consumer electronics, and more. Below, we will discuss the field of application and working principle of the HGT1S20N35G3VLS IGBT.
Field of Application
The HGT1S20N35G3VLS IGBT is used in a wide variety of applications, including renewable energy, industrial motors, consumer electronics, power tools, home appliances and automotive electronics. In the renewable energy field, it is used to control the flow of electrical power from solar and wind energy sources. In the industrial motors field, it is used to efficiently drive and control large motors in large scale production. In the consumer electronics field, it is used in high-end televisions, home audio systems and video game consoles. In power tools, it is used to regulate motor speed and improve battery life. In home appliances, it is used in washing machines, refrigerators and air conditioning units. Finally, it is used in automotive electronics to help manage battery life and provide smoother control of electric and hybrid vehicles.
Working Principle
The HGT1S20N35G3VLS IGBT is a high voltage and high current transistor. It is a combination of a bipolar transistor and a MOSFET and is a voltage controlled device. It is also known as a “fast switching device” as it switches within hundred nanoseconds. It is capable of switching power up to 1200V with a maximum current rating of 35A.
The working principle of the HGT1S20N35G3VLS IGBT is based on the theoretical property of current flow. When the gate is supplied with a voltage greater than the reverse voltage of the collector and emitter junction, a strong electric field is formed. This electric field pulls the electrons from the emitter to the collector, which is known as the minority carriers, thereby turning the IGBT on.
When the gate voltage is decreased, the electric field decreases and the current gets cut off. This process happens extremely quickly and the IGBT turns off. This allows the device to be used in a wide range of applications. From controlling large motors to regulating battery life, the HGT1S20N35G3VLS IGBT has become an important tool for electrical engineers in the modern world.
Conclusion
The HGT1S20N35G3VLS IGBT is a high voltage and high current transistor. It is commonly used in a variety of applications, including renewable energy, industrial motors, consumer electronics, power tools, home appliances, and automotive electronics. The working principle of the HGT1S20N35G3VLS IGBT is based on the theoretical property of current flow. When the gate voltage is provided with a voltage greater than the reverse voltage of the collector and emitter junction, a strong electric field is created, allowing the current to flow through the device. This process is quick and powerful, making it an ideal device for power regulation and control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HGT1S20N35G3VLS | ON Semicondu... | 0.0 $ | 1000 | IGBT 380V 20A 150W TO263A... |
HGT1S7N60C3DS | ON Semicondu... | 0.0 $ | 1000 | IGBT 600V 14A 60W TO263AB... |
HGT1S12N60A4DS | ON Semicondu... | 2.27 $ | 1000 | IGBT 600V 54A 167W D2PAKI... |
HGT1S10N120BNS | ON Semicondu... | -- | 1000 | IGBT 1200V 35A 298W TO263... |
HGT1S12N60A4S9A | ON Semicondu... | 0.0 $ | 1000 | IGBT 600V 54A 167W TO263A... |
HGT1S20N60C3S9A | ON Semicondu... | -- | 1000 | IGBT 600V 45A 164W TO263A... |
HGT1S20N60A4S9A | ON Semicondu... | -- | 1000 | IGBT 600V 70A 290W TO263A... |
HGT1S14N36G3VLS | ON Semicondu... | 0.0 $ | 1000 | IGBT 390V 18A 100W TO263A... |
HGT1N30N60A4D | ON Semicondu... | 0.0 $ | 1000 | IGBT SMPS N-CHAN 600V SOT... |
HGT1S2N120CN | ON Semicondu... | -- | 1000 | IGBT 1200V 13A 104W I2PAK... |
HGT1S3N60A4DS9A | ON Semicondu... | -- | 1000 | IGBT 600V 17A 70W D2PAKIG... |
HGT1S20N36G3VL | ON Semicondu... | 0.0 $ | 1000 | IGBT 395V 37.7A 150W TO26... |
HGT1S7N60A4DS | ON Semicondu... | -- | 1000 | IGBT 600V 34A 125W TO263A... |
HGT1S10N120BNST | ON Semicondu... | -- | 1000 | IGBT 1200V 35A 298W TO263... |
HGT1N40N60A4D | ON Semicondu... | 0.0 $ | 1000 | IGBT SMPS N-CHAN 600V SOT... |
HGT1S14N36G3VLT | ON Semicondu... | -- | 1000 | IGBT 390V 18A 100W TO262A... |
HGT1S7N60C3DS9A | ON Semicondu... | -- | 1000 | IGBT 600V 14A 60W TO263AB... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...

IGBT 1200V TO247-3IGBT

IGBT 1200V TO247-3IGBT 1200V 57A 200W T...

IGBT 600V TO-247 COPAKIGBT

INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...

POWER MOSFET TO-3IGBT
