HGT1S7N60C3DS Discrete Semiconductor Products |
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| Allicdata Part #: | HGT1S7N60C3DS-ND |
| Manufacturer Part#: |
HGT1S7N60C3DS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 14A 60W TO263AB |
| More Detail: | IGBT 600V 14A 60W Surface Mount TO-263AB |
| DataSheet: | HGT1S7N60C3DS Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Power - Max: | 60W |
| Supplier Device Package: | TO-263AB |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -- |
| Reverse Recovery Time (trr): | 37ns |
| Test Condition: | 480V, 7A, 50 Ohm, 15V |
| Td (on/off) @ 25°C: | -- |
| Gate Charge: | 23nC |
| Input Type: | Standard |
| Switching Energy: | 165µJ (on), 600µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 7A |
| Current - Collector Pulsed (Icm): | 56A |
| Current - Collector (Ic) (Max): | 14A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The HGT1S7N60C3DS is a IGBT (Insulated Gate Bipolar Transistor) module manufactured by Hitachi. It is a single IGBT module, and is widely used in a variety of applications due to it being one of the most reliable, efficient, and cost-effective IGBTs on the market.
This IGBT module is capable of supporting an output up to 600 amps and 1200 volts, across a power range of 600-5500 Watts. It is typically used in motor drives, machine tools and industrial robots, as well as in other industrial applications.
The HGT1S7N60C3DS IGBT module works on the principle of insulated gate bipolar transistors. It works similarly to a bipolar junction transistor (BJT), where it has two junctions (base-emitter and collector-base) that are connected to two different current paths. However, unlike a BJT, the HGT1S7N60C3Ds incorporates an insulated gate between the base-emitter junction and the collector-base junction, thereby allowing for greater control over current flow.
The key to the success of the HGT1S7N60C3DS is its unique technology and design. It incorporates a vertical planar structure and advanced planar insulation technology, providing the device with improved resistance to surge current, heat, and noise. This, combined with its ability to offer high-current capacity and low on-state voltage drop, makes it a great choice for applications that require high power and rapid switching.
In addition, the HGT1S7N60C3DS is also designed to be highly reliable and robust, due to its low noise and high immunity to transient voltages, which can cause failure in other IGBTs. It also has excellent ESD (electrostatic discharge) protection, and comes with built-in protection diodes for improved protection against overvoltage and overcurrent.
All of these features make the HGT1S7N60C3DS one of the most popular IGBTs on the market, and it is used in a wide range of industrial and commercial applications, such as motor drives, HVAC systems, industrial machine tools, robots, and more. To ensure the safe and efficient operation of the module, it is important to follow the manufacturer\'s instructions for installation and maintenance.
The specific data is subject to PDF, and the above content is for reference
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HGT1S7N60C3DS Datasheet/PDF