
Allicdata Part #: | HGT1S7N60C3DS9A-ND |
Manufacturer Part#: |
HGT1S7N60C3DS9A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 14A 60W TO263AB |
More Detail: | IGBT 600V 14A 60W Surface Mount TO-263AB |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 60W |
Supplier Device Package: | TO-263AB |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Reverse Recovery Time (trr): | 37ns |
Test Condition: | 480V, 7A, 50 Ohm, 15V |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 23nC |
Input Type: | Standard |
Switching Energy: | 165µJ (on), 600µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 56A |
Current - Collector (Ic) (Max): | 14A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HGT1S7N60C3DS9A is a single transistor device belonging to the family of IGBTs (Insulated-Gate Bipolar Transistors). This device is designed to be used in applications with high power levels, such as in inverters, motor controllers, power supplies, and renewable energy applications.
A basic three-terminal device, the HGT1S7N60C3DS9A is composed of an emitter, a collector and a gate. The collector is connected to the source of power, and the emitter is connected to the load. By applying a voltage to the gate, the device can be made to switch from OFF to ON, thus allowing it to control the flow of power from the source to the load.
When the device is in its OFF (open) state, no current can pass from the collector to the emitter. Once a voltage is applied to the gate, ions in the gate injection layer of the device become attracted to the gate and the device moves into its ON state. This action allows for current to flow freely between the emitter and collector.
The HGT1S7N60C3DS9A is a power transistor device intended for applications with high power levels. It boasts a wide range of features, making it an effective and reliable device in a variety of applications. Some of these features include a very low on-state resistance, excellent thermal management, fast switching action, and high current density.
These features, along with its outstanding superior ruggedness, make the HGTS7N60C3DS9A an ideal device for use in motor control, power conversion, and renewable energy applications, such as solar and wind power. In these types of applications, the reliable and fast switching action of this device helps ensure smooth and efficient operation, even in demanding environments.
In conclusion, the HGT1S7N60C3DS9A is an excellent example of an IGBT power transistor device, designed for use in applications with high power levels. With its wide range of features and outstanding ruggedness, it provides reliable operation, even in demanding environments. Additionally, its fast switching action helps ensure smooth and efficient operation, making it a superior choice for power conversion and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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