HGT1S7N60C3DS9A Allicdata Electronics
Allicdata Part #:

HGT1S7N60C3DS9A-ND

Manufacturer Part#:

HGT1S7N60C3DS9A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 14A 60W TO263AB
More Detail: IGBT 600V 14A 60W Surface Mount TO-263AB
DataSheet: HGT1S7N60C3DS9A datasheetHGT1S7N60C3DS9A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 60W
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: --
Reverse Recovery Time (trr): 37ns
Test Condition: 480V, 7A, 50 Ohm, 15V
Td (on/off) @ 25°C: --
Gate Charge: 23nC
Input Type: Standard
Switching Energy: 165µJ (on), 600µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Current - Collector Pulsed (Icm): 56A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The HGT1S7N60C3DS9A is a single transistor device belonging to the family of IGBTs (Insulated-Gate Bipolar Transistors). This device is designed to be used in applications with high power levels, such as in inverters, motor controllers, power supplies, and renewable energy applications.

A basic three-terminal device, the HGT1S7N60C3DS9A is composed of an emitter, a collector and a gate. The collector is connected to the source of power, and the emitter is connected to the load. By applying a voltage to the gate, the device can be made to switch from OFF to ON, thus allowing it to control the flow of power from the source to the load.

When the device is in its OFF (open) state, no current can pass from the collector to the emitter. Once a voltage is applied to the gate, ions in the gate injection layer of the device become attracted to the gate and the device moves into its ON state. This action allows for current to flow freely between the emitter and collector.

The HGT1S7N60C3DS9A is a power transistor device intended for applications with high power levels. It boasts a wide range of features, making it an effective and reliable device in a variety of applications. Some of these features include a very low on-state resistance, excellent thermal management, fast switching action, and high current density.

These features, along with its outstanding superior ruggedness, make the HGTS7N60C3DS9A an ideal device for use in motor control, power conversion, and renewable energy applications, such as solar and wind power. In these types of applications, the reliable and fast switching action of this device helps ensure smooth and efficient operation, even in demanding environments.

In conclusion, the HGT1S7N60C3DS9A is an excellent example of an IGBT power transistor device, designed for use in applications with high power levels. With its wide range of features and outstanding ruggedness, it provides reliable operation, even in demanding environments. Additionally, its fast switching action helps ensure smooth and efficient operation, making it a superior choice for power conversion and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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