HGT1S20N60A4S9A Allicdata Electronics

HGT1S20N60A4S9A Discrete Semiconductor Products

Allicdata Part #:

HGT1S20N60A4S9A-ND

Manufacturer Part#:

HGT1S20N60A4S9A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 70A 290W TO263AB
More Detail: IGBT 600V 70A 290W Surface Mount TO-263AB
DataSheet: HGT1S20N60A4S9A datasheetHGT1S20N60A4S9A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 290W
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 20A, 3 Ohm, 15V
Td (on/off) @ 25°C: 15ns/73ns
Gate Charge: 142nC
Input Type: Standard
Switching Energy: 105µJ (on), 150µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Current - Collector Pulsed (Icm): 280A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Integrated Gate Bipolar Transistors (IGBTs) are widely used in power electronic applications such as motor control, inverters, switch mode power supplies and UPS systems. The HGT1S20N60A4S9A is part of a series of IGBTs from ROHM Semiconductor and is capable of delivering up to 600 V, 20 A and 150 W of power.

IGBTs operate by combining the benefits of both bipolar transistors and MOSFETs.The HGT1S20N60A4S9A has a voltage input terminal (gate-emitter) to control the voltage between the collector and emitter. The voltage is applied via an external gate driver circuit, and when the gate voltage is sufficient it will turn on the IGBT and allow current to flow through the collector and emitter. The gate driver must provide sufficient voltage and current to turn on the IGBT and must be able to withstand the high voltage applied by the IGBT.

The HGT1S20N60A4S9A has a maximum operating voltage of 600 V and a maximum operating current of 20 A. This makes it suitable for a range of applications, including motor control and AC-DC switching systems. It also features a wide operating temperature range of -40°C to +150°C and a low on-state voltage drop of <0.75 V. The low on-state voltage drop ensures low power dissipation and efficient use of power.

The HGT1S20N60A4S9A is a suitable option for power electronic applications where high current or voltage switching is required. It can be used in applications requiring a low on-state voltage drop for better efficiency and long life expectancy, as well as applications that require wide operating temperature ranges. In addition, the HGT1S20N60A4S9A is capable of withstanding the high voltage and high current that is often encountered in power electronic applications.

In summary, the HGT1S20N60A4S9A is a reliable, high-performance IGBT capable of handling up to 600 volts and 20 amps of power. It offers a low on-state voltage drop, wide operating temperature range and high current and voltage switching capability, making it an ideal choice for various power electronic applications such as motor control, switching systems and inverters.

The specific data is subject to PDF, and the above content is for reference

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