
HGT1S20N60A4S9A Discrete Semiconductor Products |
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Allicdata Part #: | HGT1S20N60A4S9A-ND |
Manufacturer Part#: |
HGT1S20N60A4S9A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 70A 290W TO263AB |
More Detail: | IGBT 600V 70A 290W Surface Mount TO-263AB |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 290W |
Supplier Device Package: | TO-263AB |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 390V, 20A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/73ns |
Gate Charge: | 142nC |
Input Type: | Standard |
Switching Energy: | 105µJ (on), 150µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 280A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Integrated Gate Bipolar Transistors (IGBTs) are widely used in power electronic applications such as motor control, inverters, switch mode power supplies and UPS systems. The HGT1S20N60A4S9A is part of a series of IGBTs from ROHM Semiconductor and is capable of delivering up to 600 V, 20 A and 150 W of power.
IGBTs operate by combining the benefits of both bipolar transistors and MOSFETs.The HGT1S20N60A4S9A has a voltage input terminal (gate-emitter) to control the voltage between the collector and emitter. The voltage is applied via an external gate driver circuit, and when the gate voltage is sufficient it will turn on the IGBT and allow current to flow through the collector and emitter. The gate driver must provide sufficient voltage and current to turn on the IGBT and must be able to withstand the high voltage applied by the IGBT.
The HGT1S20N60A4S9A has a maximum operating voltage of 600 V and a maximum operating current of 20 A. This makes it suitable for a range of applications, including motor control and AC-DC switching systems. It also features a wide operating temperature range of -40°C to +150°C and a low on-state voltage drop of <0.75 V. The low on-state voltage drop ensures low power dissipation and efficient use of power.
The HGT1S20N60A4S9A is a suitable option for power electronic applications where high current or voltage switching is required. It can be used in applications requiring a low on-state voltage drop for better efficiency and long life expectancy, as well as applications that require wide operating temperature ranges. In addition, the HGT1S20N60A4S9A is capable of withstanding the high voltage and high current that is often encountered in power electronic applications.
In summary, the HGT1S20N60A4S9A is a reliable, high-performance IGBT capable of handling up to 600 volts and 20 amps of power. It offers a low on-state voltage drop, wide operating temperature range and high current and voltage switching capability, making it an ideal choice for various power electronic applications such as motor control, switching systems and inverters.
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