HGT1S2N120CN Discrete Semiconductor Products

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IGBTs are a type of transistor which combine the best of both bipolar and field-effect technology. They are well suited to applications where fast switching and high power are required, and they offer advantages including low on-resistance, low switching losses and low tail current. The HGT1S2N120CN is a single IGBT with a maximum on-state current of 160A. It is designed for use in motor control, home appliance and lighting systems, as well as UPS and HVAC applications.

Features

The HGT1S2N120CN has a VCE rating of 1200V and a collector-emitter voltage of 1200V. It is designed to handle peak currents up to a rated value of 160A, with a maximum gate-emitter voltage of +/-20V. The part has a very low gate charge, making it very efficient in applications which require high switching speeds. It has a low on resistance of just 0.5Ohms and can operate over a wide range of temperatures, from -40C to +150C.

Working Principle

The working principle of the HGT1S2N120CN is based on the fact that it is an insulated gate bipolar transistor (IGBT). It works by passing current between the collector and emitter when the gate-emitter voltage is applied. When the gate-emitter voltage is applied, it creates a “pinch-off” effect, which effectively forms a barrier between the collector and emitter, preventing current flow. When the gate-emitter voltage is removed, the barrier is broken and current can flow through the transistor.

Applications

The HGT1S2N120CN can be used in a wide range of applications, including home appliance and lighting systems, motor control, UPS systems, HVAC systems, and electric vehicle systems. Its high switching performance and low on resistance make it well suited for applications where fast switching and high power are required. Its low gate charge and wide operating temperature range also make it suitable for use in harsh environments.

Summary

The HGT1S2N120CN is a single IGBT with a maximum on-state current of 160A. It has a VCE rating of 1200V and a collector-emitter voltage of 1200V. It is designed to handle peak currents up to a rated value of 160A, with a maximum gate-emitter voltage of +/-20V. It has a low on resistance of 0.5Ohms and can operate over a wide range of temperatures, from -40C to +150C. The HGT1S2N120CN can be used in a wide range of applications, including home appliance and lighting systems, motor control, UPS systems, HVAC systems, and electric vehicle systems. Its high switching performance and low on resistance make it well suited for applications where fast switching and high power are required.

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