HIP6601BCB Allicdata Electronics
Allicdata Part #:

HIP6601BCB-ND

Manufacturer Part#:

HIP6601BCB

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRIVER MOSFET DUAL 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: HIP6601BCB datasheetHIP6601BCB Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): --
Base Part Number: HIP6601B
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 20ns
High Side Voltage - Max (Bootstrap): 15V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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HIP6601BCB is an advanced high performance gate driver from Intersil. It is classified as a PMIC - Gate Driver and is designed for high power applications. The device features a full flexible drive design, wide operating range, low operating voltage and low quiescent current.

The HIP6601BCB features a dual independent high-efficiency bipolar driver that is capable of delivering up to 2A peak current per channel. The device employs a low-voltage drop current limit protection, reducing heat dissipation in normal operation. The device also has two built-in 500μA output drivers that can drive a variety of loads, providing a wide range of output voltage levels.

The key applications of the HIP6601BCB include industrial and automotive, motor control, and home appliances. The device is also suitable for use in power supplies and DC-DC converters. In addition, the device offers high noise immunity, over-temperature protection, and reverse-current protection.

The basic circuit of the HIP6601BCB consists of two independent channels, each of which has two optimized gate drivers and two output drivers. Each of the two output drivers is connected to the associated gate drivers via their output current limit resistor, which allows the output current to be regulated. The output driver consists of two high-side and one low-side output stages arranged in a V-type configuration. The output stages are driven by the gate driver, and the input signals are applied to the gate of the output stage.

The device contains a charge pump circuit that allows the gate voltage of the device to reach high levels, namely 12V and -10V, for optimal driving of the load transistors. Furthermore, the gate driver circuitry supports low voltage control logic signals, allowing the gate driver to be used in a wide variety of applications. The device also provides integrated protection in the form of over-temperature protection and reverse-current protection.

In operation, the gate driver accepts the control signal and delivers two different kinds of voltage: either a high level voltage or a low level voltage, depending on the state of the control signal. The high level voltage level is higher than the supply voltage, and the low level voltage is very close to the VS supply voltage and is below the threshold voltage of the output transistors. The gate driver then switches the output transistors on and off, thus controlling the output voltage. The output voltage is proportional to the output current and is determined by the value of the current limit resistor.

Overall, the HIP6601BCB offers a reliable and robust solution for driving power transistors in many applications. The device provides high efficiency operation, wide supply voltage range, low voltage drop current limitation, high and low side separate logic level control, and wide current and voltage range. Furthermore, the integrated protection ensures safe operation and prevents damage to the components.

The specific data is subject to PDF, and the above content is for reference

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