HMC1144-SX Allicdata Electronics
Allicdata Part #:

1127-3579-ND

Manufacturer Part#:

HMC1144-SX

Price: $ 423.06
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: RF AMPLIFIER
More Detail: RF Amplifier IC VSAT 40GHz ~ 70GHz Die
DataSheet: HMC1144-SX datasheetHMC1144-SX Datasheet/PDF
Quantity: 12
2 +: $ 384.59600
Stock 12Can Ship Immediately
$ 423.06
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Frequency: 40GHz ~ 70GHz
P1dB: 21dBm
Gain: 19dB
Noise Figure: --
RF Type: VSAT
Voltage - Supply: 4V
Current - Supply: 320mA
Test Frequency: --
Package / Case: Die
Supplier Device Package: Die
Base Part Number: HMC1144
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HMC1144-SX is an integrated, monolithic amplifier core suitable for RF applications.

The core features a low noise, GaAs MESFET input device, and offers high gain and low distortion performance. The HMC1144-SX has a frequency range of 18 to 22 GHz, and its gain can be adjusted using external components. The amplifier also has an integrated active bias circuit, allowing it to operate from a single supply of 5 to 10V.

The HMC1144-SX\'s primary application areas include point-to-point microwave radio links, point-to-multipoint microwave radio links, VSAT systems, radar, EMI/RFI compliance testing, and medical imaging. Its unique combination of high gain, low noise, and low distortion make it ideal for these types of applications.

Working Principle

The HMC1144-SX uses the common source configuration for amplification. An input signal is applied to the source terminal of the MESFET, while the drain is connected to the output, and the gate is connected to the active bias circuit.

The active bias circuit provides the requisite gate bias to the MESFET in order to achieve optimal gain, linearity, and noise performance. Adjusting the bias voltage allows the user to tailor the gain and linearity of the amplifier core, while maintaining low noise. The active bias circuit also isolates the power supply from the RF signal path, providing improved reliability and dynamic range.

The HMC1144-SX also features an output power detector, which is used in conjunction with the active bias circuit to optimize the amplifier performance for the specific application. The output power detector can be used to detect an output signal level and to automatically adjust the bias of the amplifier for optimal performance.

Conclusion

The HMC1144-SX is a high-performance RF amplifier core, which is suitable for a wide range of applications. The core features a low noise, GaAs MESFET input device, and offers high gain and low distortion performance. The active bias circuit and output power detector allow the user to tailor the amplifier\'s performance, and the integrated active bias circuit allows it to operate from a single supply of 5 to 10V. The HMC1144-SX is perfect for applications such as point-to-point microwave radio links, point-to-multipoint microwave radio links, VSAT systems, radar, EMI/RFI compliance testing, and medical imaging.

The specific data is subject to PDF, and the above content is for reference

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