HMC902LP3ETR Allicdata Electronics

HMC902LP3ETR RF/IF and RFID

Allicdata Part #:

1127-1074-2-ND

Manufacturer Part#:

HMC902LP3ETR

Price: $ 17.69
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC AMP MMIC GAAS LN 16QFN
More Detail: RF Amplifier IC General Purpose 5GHz ~ 10GHz 16-QF...
DataSheet: HMC902LP3ETR datasheetHMC902LP3ETR Datasheet/PDF
Quantity: 721
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 17.69000
10 +: $ 17.15930
100 +: $ 16.80550
1000 +: $ 16.45170
10000 +: $ 15.92100
Stock 721Can Ship Immediately
$ 17.69
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 5GHz ~ 10GHz
P1dB: 16dBm
Gain: 19.5dB
Noise Figure: 1.8dB
RF Type: General Purpose
Voltage - Supply: 3.5V
Current - Supply: 110mA
Test Frequency: --
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)
Description

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RF amplifiers are a type of electronic circuit used for amplifying electromagnetic signals in a range of radio frequency (RF) applications. Among the most popular types of RF amplifiers used today is the HMC902LP3ETR, a high performance amplifier manufactured by Hittite Microwave Corporation. This state-of-the-art device is capable of delivering excellent signal gain and linearity. It is also exceptionally fuel-efficient and offers a reliable, high-performance solution for many types of applications.

The HMC902LP3ETR amplifier is designed for delivering high levels of signal gain over a wide range of frequencies, making it suitable for just about any RF communication application. The device operates in the 860 - 890 MHz frequency range and features a low noise figure of 1.5 dB and output power of up to +20dBm. Additionally, the amplifier uses a low current quiescent and a low power dissipation mode, making it exceptionally efficient when it comes to handling power.

At the heart of the HMC902LP3ETR is a GaAs heterojunction bipolar transistor, which is what provides the amplifier with its high performance capabilities. This transistor amplifies current and voltage, making it an ideal choice for amplifying RF signals with low noise and high linearity. The transistor also features a wide dynamic bias range, which enables the amplifier to deliver superior performance even when the supply voltage and temperature vary.

The main application field for the HMC902LP3ETR is base station applications in wireless infrastructure. This type of application requires extreme signal linearity and accuracy, and this is precisely what the HMC902 delivers. The amplifier can be used in cellular and PCS base station transmitters, as well as repeaters and active antennas that are commonly found in mobile communication systems.

The working principle of the HMC902LP3ETR revolves around its use of a high-frequency GaAs heterojunction bipolar transistor. This transistor amplifies the signal and supplies current and voltage to enable the amplifier to reach its high performance. It also uses a dynamic bias range to ensure that the performance remains consistent, even when the supply voltage and temperature vary. Additionally, the amplifier is capable of delivering a low noise figure and excellent gain, making it one of the most reliable amplifiers available today.

The HMC902LP3ETR amplifier is a powerful and reliable RF amplifier that makes perfect sense for mobile communication base stations, repeaters, and active antennas. This amplifier has a wide frequency range, low noise figure, low power dissipation, and dynamic bias range, all of which make it ideal for just about any RF communication application.

The specific data is subject to PDF, and the above content is for reference

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