HMC930A

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RF amplifiers, particularly those found in mobile radio communications from the cellular to the broadcast bands, require high frequency stability, high linearity and low noise figures. HMC930A is a range of gallium arsenide monolithic medium power amplifiers with a high gain and a mean output power of 17 dBm (250mW). It is designed for applications such as broadcast transmitters, base transceivers, mobile radios, transponders, satellite link repeaters and communication systems.

The performance and features of the HMC930A make it well suited for a variety of applications including industrial, scientific and medical (ISM) band radio communication systems, frequency modulated (FM) systems, point-to-point communication, military and avionics systems. It is also popular in cellular base station power amplifiers, digital cellular systems, and satellite communications.

The HMC930A is based on a double balanced mixer designed on a 0.5 micron GaAs wafer process. The device is capable of handling input signals up to +30 dBm @ IF frequency (930 MHz). The output power is adjustable between -2.5 dBm and 17 dBm, with a gain variation from 25 dB to 50 dB. Its mean output power of 17 dBm (250mW) makes it suitable for medium power applications. The amplifier offers a relatively flat gain across the input frequency range and is linear enough for applications in variable frequency, frequency hopping, phase modulated and frequency modulated systems.

The main working principle of HMC930A is the same as any other amplifier, whereby the input signal is amplified by a factor of the device’s gain. This gain is achieved by taking advantage of the transistors’ transconductance (gm) and its capacitive or inductive load impedances. The gain can be adjusted externally using two control ports, one for input signal and the other for output signal. This allows the user to optimise the device for the intended application.

To ensure reliable operation, the amplifier is supplied with a set of protection features. It features over-voltage protection, thermal protection, and under-voltage lockout protection, allowing the amplifier to operate safely in a wide variety of industrial and commercial environments. Furthermore, the HMC930A provides an integrated power supply voltage reference, allowing it to be used over large temperature ranges and vary the output power. These newly developed features provide superior performance and reliability.

The HMC930A is the ideal choice for applications such as broadcast transmitters, base transceivers, mobile radios, transponders, satellite link repeaters and communication systems. The amplifier provides excellent gain and linearity, high stability, low noise, and integrated protection features. It can be optimised for the required frequency and output power with the two external control pins. The amplifier is designed on a 0.5 micron GaAs wafer process, making it a reliable and cost-effective solution for medium power applications.

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