HSM350G/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	620mV @ 3A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 50V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-215AB, SMC Gull Wing
Supplier Device Package:	DO-215AB
Operating Temperature - Junction:	-55°C ~ 175°C
Base Part Number:	HSM350

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HSM350G/TR13 Application Field and Working PrincipleThe HSM350G/TR13 is a high-performance, low dropout, P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) rectifier. It is a mechanical form of rectification, commonly referred to as a diode rectifier, and has been widely used in many applications due to its dependability and cost-effective construction. This article will provide an in-depth look at the working principle and application field of the HSM350G/TR13.A rectifier is a device that converts AC (alternating current) to DC (direct current). It works by blocking reverse current and allowing only unidirectional current to flow in a circuit. A diode rectifier consists of a p-type and n-type semiconductor to form a diode junction, which functions as a valve that decides the direction of current flow. When forward-bias voltage is applied to the diode, it conducts current in the forward direction, whereas reverse-bias voltage prevents current from flowing in the reverse direction. The HSM350G/TR13 is an enhancement-mode P-channel MOSFET whose gate voltage is utilized to modulate the gate-to-source voltage, thereby controlling the flow of current.HSM350G/TR13 is suitable for a wide range of applications, such as switch-mode power supplies, power conversion, and battery chargers. It is capable of handling large output currents with high efficiency and low losses, compared to an equivalent diode rectifier. Additionally, the device requires no startup current, making it ideal for low-power and low-dropout applications. The HSM350G/TR13 comes with a rating of 100V, 1A, and a maximum switching frequency of 120kHz.The device works by utilizing the metal-oxide semiconductor (MOS) effect, which can be used to control current flow. The MOSFET works by modulating the voltage across the p-gate and n-drain, in order to control the flow of electrons. In essence, the positive gate voltage generates an electric field, which attracts electrons through the n-drain and into the p-gate, thereby allowing current flow from the drain to the source. When reverse-bias voltage is applied, the electrons are repelled away from the p-gate, thus preventing current from flowing.In terms of usage, the HSM350G/TR13 is extremely versatile and can be used for multiple applications. It can be used for current source (constant source current) and current mirror (constant sink current) applications, or with power transistors used as a switch to control a load. It can also be used in low-dropout converters, voltage-controlled oscillators, power amplifiers and a host of other circuits.Overall, the HSM350G/TR13 is an advanced rectifier that provides high-level performance and dependability. It is an excellent choice for a wide array of applications and can be used in a variety of devices and circuits. Its wide range of current rating, along with its low dropout voltage characteristics make it an ideal choice for use in low-dropout and low-power applications.

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