Allicdata Part #: | HSM380JE3/TR13-ND |
Manufacturer Part#: |
HSM380JE3/TR13 |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 80V 3A DO214AB |
More Detail: | Diode Schottky 80V 3A Surface Mount DO-214AB |
DataSheet: | HSM380JE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.48223 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 810mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 80V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | HSM380 |
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The HSM380JE3/TR13 is a rectifier diode containing a single crystal silicon chip. It is widely used in a variety of applications, from power control to voltage regulation. The diode is ideal for high-frequency conversion, rectification, and for controlling power in high-voltage and high power applications. It is highly rated for its fast switching speed and low capacitance.
It is primarily used in industrial rectification and conversion circuits, but is also suitable for a variety of other applications. The HSM380JE3/TR13 is designed to handle reverse voltage up to 380V, with a rated average rectified current at up to 6A. It is available in an ultra small 2-pin SOD-323 package, which makes it an ideal choice for space-constrained applications. The diode features a low reverse leakage current of 5µA at 25°C and a low forward voltage drop of 0.745V at IF = 3.2A.
The working principle of the HSM380JE3/TR13 is based on P–N-junction. The P-type region is formed by doping a layer of silicon with a small amount of boron, and the N-type is formed by doping with a small amount of phosphorus. When a voltage is applied to the diode, a current will flow through the P-N junction, as electrons in the N-type are repelled by the negative charge of the P-type region, and holes in the P-type are repelled by the positive charge of the N-type. This current flow, known as the "forward bias", is what powers the device.
The HSM380JE3/TR13 also has the ability to act as a "reverse-biased" diode, meaning that if the voltage is reversed, the current will not flow. This is due to the fact that the positive charge of the N-type region is greater than the negative charge of the P-type region, and so the majority carriers across the junction are repelled by the opposite charge. This makes the diode ideal for preventing current flowing in the wrong direction, and is useful for power regulation and control.
One of the great advantages of the HSM380JE3/TR13 is its low capacitance. When used in rectification circuits, the device has a very low capacitance, which helps to reduce the amount of noise and interference caused by the circuit. Additionally, the device can be used for voltage clamping, where the diode acts as a surge protection device and prevents the output voltage from exceeding a predetermined level. The HSM380JE3/TR13 also has a low forward voltage drop, meaning that it can be used as an efficient component for regulating power in low-voltage applications.
In conclusion, the HSM380JE3/TR13 is an ideal component for a wide range of rectifier and conversion applications. Its high switching speed, low capacitance, and low forward voltage drop make it a great choice for projects where space is at a premium. It is also useful for controlling power in high-voltage and high power applications, and in voltage regulation and protection. The device is highly durable, with a long lifetime and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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