HSMP-3820-BLKG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	50V
Current - Max:	1A
Capacitance @ Vr, F:	0.8pF @ 20V, 1MHz
Resistance @ If, F:	600 mOhm @ 10mA, 100MHz
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HSMP-3820

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HSMP-3820-BLKG application field and working principle

The HSMP-3820-BLKG is a high-speed, high-power GaAs Schottky diode manufactured by Avago Technologies. It is intended for use in a variety of low-loss, high-reliability applications. The diode is designed with a wide variety of features, including high power dissipation, low junction capacitance, low forward resistance and high breakdown voltage.The HSMP-3820-BLKG diode is widely used in RF applications such as power amplifiers, mixers, high-frequency circuits, and impedance matching networks. The device is also suitable for use in high-speed switching and gate drive circuits. It is a popular choice for radio frequency (RF) applications due to its excellent power handling capabilities and low forward resistance.Due to its wide range of capabilities, the HSMP-3820-BLKG is an ideal device for RF applications. It delivers low power loss, high power handling, fast switching speed and high breakdown voltage. The device has a low junction capacitance, allowing for faster switching times and improved power density.The working principle of the HSMP-3820-BLKG diode is based on the effects of electric fields on diode junctions. The diode\'s forward bias is achieved when the positive side of the device is connected to the negative side of the power source. At this point, electrons flow through the forward biased junction between the two sides of the device and the voltage across the junction is trapped in the form of an electric field.When the voltage across the junction exceeds the breakdown voltage, current begins to flow through the device. This current is the result of electrons being pushed through the diode\'s junction and is referred to as forward current. As the diode is switched from forward-biased to reverse-biased, the electric field across the diode is reversed and electrons are pulled through the junction. This current is known as reverse current and is the result of electrons being pulled through the junction by the application of a reverse voltage.The HSMP-3820-BLKG is a reliable, versatile device used in a variety of RF applications. It has excellent power handling capacities and its low junction capacitance ensures fast switching speeds. It is designed with low forward resistance and a high breakdown voltage and is suitable for use in high-speed switching and gate drive circuits.

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