HSMP-481B-BLKG

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The HSMP-481B-BLKG is a series of radio frequency (RF) diode designed specifically to be used with a range of radio frequency applications and systems. This type of diode is commonly used in medium power RF systems to provide gain and output power. The HSMP-481B-BLKG has a CTR of 220, which means it is capable of producing a high power RF signal after being powered up.

The HSMP-481B-BLKG is ideal for applications ranging from high end broadcast, military communications, and medical equipment due to its wide frequency range and fast switching speeds. It also offers a high level of reliability in terms of its output power, gain, and protection from RF leakage. The HSMP-481B-BLKG has been designed to take on both pulsed and DC operation and is capable of operating in temperatures ranging from -55°C to +125°C.

The HSMP-481B-BLKG is available in various package sizes and shapes such as mini-MELF, SOT-89 and surface mount packages. The common pinout for the HSMP-481B-BLKG is “S”, “D”, and “G”, where “S” is the source connection, “D” is the drain, and “G” is the ground connection, respectively. The source and drain connections must be connected to the RF source, and the ground connection should be connected to the ground.

The HSMP-481B-BLKG features an ohmic contact region, which is connected to an N-type diffusion layer, a high doping region and a P-type contact. When connected, this type of diode acts as a controllable PIN diode, providing an improved signal-to-noise ratio. The HSMP-481B-BLKG also features a long-term reliability even in high power applications by having low contact resistance and low thermal resistance.

The HSMP-481B-BLKG PIN diode also offers high isolation between input and output, making it ideal for use in RF applications where a single-ended signal is transmitted and it serves as a switching element for multiplexers and low to high power amplifiers. It is also capable of being used as a signal-attenuator and noise-attenuator at the same time.

When the HSMP-481B-BLKG PIN diode is used, the source and drain are connected to the RF input signal, the gate is connected to a control voltage, and the ground is connected to the ground. The control voltage serves to adjust the diode’s resistance. In its reverse biased condition, the diode acts as an open switch, allowing the RF input signal to pass straight through. When the control voltage is increased, the resistance of the diode decreases, thus allowing the RF signal to be attenuated.

The HSMP-481B-BLKG is an ideal choice for RF applications due to its wide frequency range, fast switching speeds, and long-term reliability even in high power applications. Its low contact resistance and thermal resistance ensure a high level of reliability and output power. Its ability to be used as a signal-attenuator and noise-attenuator makes it suitable for several applications including broadcast, military communications, and medical equipment.

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