
Allicdata Part #: | HSMP-3833-BLKG-ND |
Manufacturer Part#: |
HSMP-3833-BLKG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GP 200V SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Anode 200V 1A 250mW S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Common Anode |
Voltage - Peak Reverse (Max): | 200V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.3pF @ 50V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Description
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The HSMP-3833-BLKG RF diode is a semiconductor device designed to act as a switch, rectifier, and/or voltage regulator. It is capable of handling high frequency inputs from RF sources, as well as medium frequency sources. It utilizes a Schottky barrier structure and has a maximum break down voltage of 30V. The HSMP-3833-BLKG has a low reverse leakage current, meaning it can provide higher signal levels with fewer losses due to the presence of a higher impedance in the signal path.The HSMP-3833-BLKG offers a variety of applications. It can be used as a highly efficient switch for signal control and signal routing in many applications, including automotive and aerospace electronics, receivers, transmitters, and amplifiers. It can also be used to construct a voltage regulator circuit, in which the diode could serve to regulate the voltage level across the load. The HSMP-3833-BLKG is particularly well-suited for use in RF rectifier circuits due to its low capacitance, typical output power of 1.2 Amps, the maximum forward voltage drop of only 0.2 V, and its low forward voltage drop. The working principle of the HSMP-3833-BLKG diode is based on the diode\'s ability to allow current to flow in one direction, while blocking current from flowing in the opposite direction. Under reverse bias, there will be no current flow, and under forward bias, current will flow with a certain degree of resistance. This resistance is referred to as the forward voltage drop, and dictates how much voltage will be dropped when the current is passed through the diode. The Schottky barrier structure of the HSMP-3833-BLKG ensures a low forward voltage drop, thus allowing the diode to maintain a greater portion of the signal voltage during signal transmission. In summary, the HSMP-3833-BLKG RF diode is an ideal device for a wide range of applications, including signal control, signal routing, voltage regulation, and RF rectifier circuits. Its Schottky barrier structure allows for a low forward voltage drop, ensuring signal integrity is maintained and losses are minimized.
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