HSMP-3823-TR1G Allicdata Electronics
Allicdata Part #:

HSMP-3823-TR1G-ND

Manufacturer Part#:

HSMP-3823-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE PIN SWITCH 50V SOT-23
More Detail: RF Diode PIN - 1 Pair Common Anode 50V 1A SOT-23-...
DataSheet: HSMP-3823-TR1G datasheetHSMP-3823-TR1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - 1 Pair Common Anode
Voltage - Peak Reverse (Max): 50V
Current - Max: 1A
Capacitance @ Vr, F: 0.8pF @ 20V, 1MHz
Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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HSMP-3823-TR1G is a type of diode specifically designed for radio frequency (RF) applications. It is an ideal diode for those searching for a reliable option that can meet the needs of RF applications that require high power and high frequency operation. This diode has superior performance characteristics and is an excellent choice for anyone seeking out a robust diodes for the application. This article will cover the application field and working principle of the HSMP-3823-TR1G.

Application Field

The HSMP-3823-TR1G diode is best suited for RF applications that require high power and high frequency operation. Some of these RF applications include wideband amplifiers, high frequency switches and pulsed radiating systems. This diode is excellent for these types of applications due to its wideband operation, low thermal resistance, low noise, and wide forward current operation range.

The HSMP-3823-TR1G diode is also great for local oscillator and mixer circuits due to its low noise level. This makes it an ideal choice for anyone looking for an extremely low-noise diode. Other applications this diode is suitable for include antenna matching circuits, low-noise preamplifiers, and transmit/receive switching. All of these applications are ideal for the HSMP-3823-TR1G since it offers excellent performance characteristics for RF applications.

Working Principle

The HSMP-3823-TR1G diode is a junction diode, meaning that it consists primarily of two layers of semiconductor material, such as silicon or germanium, that are joined together. The junction between these two layers is called a p-n junction. When an external voltage is applied to the diode, it creates an electric field within the p-n junction. This field determines the flow of current in the diode and is directly related to the applied voltage.

When forward bias voltage is applied to the diode, the electric field created causes electrons to move from the n-type layer to the p-type layer. This is why the diode will allow current to flow in one direction and not in the other. This is the basic principle that all diodes, including the HSMP-3823-TR1G, use. The specific characteristics of this diode, such as its wideband operation, low thermal resistance, and low noise, are due to the specifics of the HSMP-3823-TR1G diode design.

Conclusion

The HSMP-3823-TR1G is an excellent diode for anyone looking for a reliable diode for high power and high frequency RF applications. This diode offers a wide forward current operation range, low noise, and low thermal resistance. It is also great for local oscillator circuits and mixers due to its low noise level. The basic working principle of this diode is the same as any other, with the differences being in the specifics of the design to achieve the desired characteristics.

The specific data is subject to PDF, and the above content is for reference

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