| Allicdata Part #: | HSMP-3813-TR2G-ND |
| Manufacturer Part#: |
HSMP-3813-TR2G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Broadcom Limited |
| Short Description: | DIODE PIN ATTENUATOR CA SOT-23 |
| More Detail: | RF Diode PIN - 1 Pair Common Anode 100V 1A SOT-23... |
| DataSheet: |  HSMP-3813-TR2G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | PIN - 1 Pair Common Anode |
| Voltage - Peak Reverse (Max): | 100V |
| Current - Max: | 1A |
| Capacitance @ Vr, F: | 0.35pF @ 50V, 1MHz |
| Resistance @ If, F: | 3 Ohm @ 100mA, 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
Description
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HSMP-3813-TR2G is a diode mainly used in Radio Frequency (RF) applications, and is designed for high speed, medium power switching and modulation. It is an advanced Schottky Barrier diode which has a low reverse leakage and fast response time. This enables it to be used in a broad range of switching, rectifying and modulation applications.
Working Principle: The HSMP-3813-TR2G diode is a Schottky diode, which works on the principle that two layers of semiconductors with different doping levels are joined together. These two layers create a rectifying junction. The Schottky barrier consists of a heavily doped semiconductor layer and a metal layer. The barrier height is equal to the difference in the Fermi Level between the two materials.
When an external voltage is applied to the diode, the electrons in the metal layer will migrate to the semiconductor layer. This establishes a current flow across the junction, which causes the diode to start conducting. In other words, the diode will become a low impedance when the applied voltage is greater than the Schottky barrier voltage. Reverse bias, however, causes a high resistance, since no electrons can cross the barrier in that direction. The particular shape of the Schottky barrier of the HSMP-3813-TR2G gives it several advantages over other diodes. Its forward voltage drop is very low, typically around 0.15 V, enabling it to handle higher currents with less power loss. It has a very fast response time, enabling it to be used in high frequency switching applications. The low reverse leakage current also makes it suitable for low power applications.
Applications: The HSMP-3813-TR2G diode is ideally suited to a range of RF applications, such as switching and modulation circuits. It can be used in systems that require linear control of RF signals, like amplifiers, mixers and modulators. The diode can also be used in oscillator circuits, optical modulators and in frequency dividing circuits. The variety of applications possible with the HSMP-3813-TR2G makes it a very useful device. It can be used in miniature RF assemblies and microwave circuits, and in high speed switching circuits. It is also a great choice for digital, analog and rf signal processing circuits, as it can handle high current and high frequency components.
In conclusion, the HSMP-3813-TR2G diode is a highly versatile device, and can be used in a range of RF applications. Its Schottky barrier ensures low forward voltage drops and low thermal resistance, making it suitable for high power and low power applications. Its fast response time and low leakage current make it ideal for many modulation, rectifying and switching applications.
The specific data is subject to PDF, and the above content is for reference
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