HSMP-3820-TR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	50V
Current - Max:	1A
Capacitance @ Vr, F:	0.8pF @ 20V, 1MHz
Resistance @ If, F:	600 mOhm @ 10mA, 100MHz
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HSMP-3820

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Introduction to HSMP-3820-TR1

The HSMP-3820-TR1 is a type of diode for radio frequency (RF) applications that is made from a silicon material. It has a junction-gate field-effect structure, which gives it superior performance compared to other types of diodes. This type of diode is particularly useful in high frequency applications where switching speeds are important.

Features and Benefits of HSMP-3820-TR1

The HSMP-3820-TR1 diode offers many features and benefits that make it a great choice for use in RF applications. It features a low typical turn-on voltage of 8-10V, as well as a fast switching speed of 250 psec, which is particularly beneficial in high-frequency applications. Additionally, the low capacitance of the HSMP-3820-TR1 helps to reduce crosstalk and other types of interference. Furthermore, the HSMP-3820-TR1’s high breakdown voltage rating, typically 60-70V, makes it suitable for use in high-voltage applications.

HSMP-3820-TR1 Application Field and Working Principle

The HSMP-3820-TR1 is an ideal diode for radio frequency (RF) applications. It is well suited for use in a variety of RF circuit designs, such as amplifiers, oscillators, modulators, transmitters, and receivers. It is also suitable for use in antennas, filters, and surge protection circuits.The HSMP-3820-TR1 is a field-effect diode, which means it is controlled by a gate voltage. It works by controlling the flow of current when forward biased. When the applied gate voltage is sufficiently high, the diode will turn on and allow current to flow; when the gate voltage is reduced, current flow is reduced or interrupted. This type of diode is particularly useful for applications where fast switching speeds are required, as it has a switching speed of 250 psec.

Conclusion

The HSMP-3820-TR1 diode is an ideal choice for radio frequency (RF) applications. It has a junction-gate field-effect structure, which gives it superior performance compared to other types of diodes. It also features a low typical turn-on voltage of 8-10V, a fast switching speed of 250 psec, a low capacitance to reduce crosstalk and other types of interference, and a high breakdown voltage rating (typically 60-70V). The HSMP-3820-TR1 is well suited for use in a variety of RF circuit designs, such as amplifiers, oscillators, modulators, transmitters, and receivers, as well as antennas, filters, and surge protection circuits.

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