HSMP-4810-TR1 Allicdata Electronics
Allicdata Part #:

HSMP-4810-TR1-ND

Manufacturer Part#:

HSMP-4810-TR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE PIN ATTENUATOR 100V SOT-23
More Detail: RF Diode PIN - Single 100V 1A SOT-23-3
DataSheet: HSMP-4810-TR1 datasheetHSMP-4810-TR1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 100V
Current - Max: 1A
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 3 Ohm @ 100mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: HSMP-4810
Description

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The HSMP-4810-TR1 is a small footprint, high isolation, and high power RF diode from Avago Technologies. The diode is specifically designed for use in high speed transmission lines, such as those found in cellular basestations, as well as radio frequency (RF) shielding applications, providing superior noise rejection and signal integrity. This versatile device can be used in a variety of applications, such as power amplifiers, power splitters, mixers, filters, and duplexers, wherein a high degree of isolation is required.

The HSMP-4810-TR1 utilizes Avago Technologies’ proprietary, direct current (DC)-blocking technology, which allows high power, low cost solutions for applications in the 3-18GHz frequency range. The device offers up to 1.5W of power, with a minimum rated isolation of 45dB, making it well suited for the majority of high-power, high-isolation applications. With minimal insertion loss, the device is ideal for applications requiring low-loss power management solutions, such as mixers, up/down converters, and directional couplers. Additionally, the device features a low temperature coefficient, providing excellent performance under various environmental conditions down to -20°C.

The HSMP-4810-TR1 features an innovative design that allows for a wide range of applications. The device is constructed with a two-conductor structure that eliminates the need for spacing or traps, thereby allowing for extended bandwidths. The device is also equipped with an integrated, highly reliable contact assembly, which allows for good electrical connections regardless of the application environment. In addition, the device is encased within a thermally enhanced plastic housing, enabling improved thermal performance without sacrificing mechanical strength.

In comparison to other devices in its category, the HSMP-4810-TR1 provides superior isolation characteristics, even at high RF power levels. This is due to its unique metal-insulator-semiconductor (MIS) structure, which allows the diode to block RF power while still providing excellent attenuation characteristics. The device is also designed to provide improved electrical performance when compared to more conventional diode technologies. Further, the device is capable of operating in a wide range of applications while providing maximum performance.

The HSMP-4810-TR1 offers a wide range of features that make it an ideal choice for high-power, high-isolation applications. Offering improved electrical performance and increased power handling capability, the device is well suited for a variety of commercial and military applications. With its broad frequency range, low temperature coefficient, and improved electrical performance, the HSMP-4810-TR1 is an ideal choice for professional RF designers who are looking for an effective and reliable solution for their high-power RF needs.

The specific data is subject to PDF, and the above content is for reference

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