HSMP-3866-TR2G

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The HSMP-3866-TR2G from Avago Technologies is a Silicon Bipolar NPN Transistors designed for CATV, cell phone, and WLAN applications. It is a wideband gallium arsenide (GaAs) process with a drain-source breakdown voltage of 28 V and a supply voltage range of 5.0 V to 28 V. The HSMP-3866-TR2G has a small area footprint, making it suitable for high-density applications.

The HSMP-3866-TR2G is a versatile device that is well-suited for a variety of different applications. It is compatible with a range of frequencies up to 4 GHz, making it particularly suitable for CATV and cell phone antenna amplifiers and RF power amplifiers. It is also suitable for WLAN applications, where it can be used for low-noise amplifiers and signal tracking amplifiers.

The HSMP-3866-TR2G can be used in both common source and common drain configurations. In the common source configuration, the drain supplies the load current to the amplifier\'s output and the transistor provides voltage gain. In the common drain configuration, the source supplies the load current to the amplifier\'s output and the transistor provides current gain.

The HSMP-3866-TR2G features Low Noise Figure (NF) and high gain. The typical NF of the device is 2.6 dB at 3 Volt Vds and 5 mA Ids. The typical gain of the device is 12.5 dB at 3 Volt Vds and 5 mA Ids. The wideband characteristics of the device allow it to be used in applications that require a wide range of amplification across multiple frequencies.

The HSMP-3866-TR2G also offers a high power dissipation capacity of 2 W, allowing for increased power efficiency for design applications. The maximum gain of the device is 20.5 dB at 5 Volt Vds and 10 mA Ids. The maximum gain and noise figure of the device are both dependent on the drain-source voltage, making it suitable for a wide range of applications.

The HSMP-3866-TR2G is an attractive choice for CATV, cell phone, and WLAN applications with its low noise figure and high gain. With its wideband characteristics and compatibility with multiple frequencies, it is well-suited for applications that require multiple frequencies and a wide range of bandwidth. Its small area footprint makes it well-suited for high-density applications and its high power dissipation capacity makes it suitable for applications that require increased power efficiency.

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