HSMP-386J-BLKG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Type:	PIN - 4 Pair Parallel
Voltage - Peak Reverse (Max):	100V
Current - Max:	1A
Capacitance @ Vr, F:	1.25pF @ 50V, 1MHz
Resistance @ If, F:	770 mOhm @ 50mA, 100MHz
Power Dissipation (Max):	2W
Operating Temperature:	150°C (TJ)
Package / Case:	8-WFDFN Exposed Pad
Supplier Device Package:	8-QFN (2x2)

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Diodes are important components in various electronic circuits, and among the many varieties of diodes, RF diodes are special because of their unique applications and principles of operation. One type of RF diode is HSMP-386J-BLKG, which is a common selection for high-frequency applications. This type of diode can be used in a wide range of applications, and understanding its field of application and working principles is essential to making the most of it. The HSMP-386J-BLKG is a 4-pin surface mount power Passivated Implanted Planar Silicon (PIPS) diode. As such, the diode has four terminals, two of them are connected to the anode and two to the cathode. The four terminals are the anode gate, the cathode gate, the anode and the cathode. The anode gate and cathode gate are used for controlling the flow of current, while the anode and cathode are the actual outlets for current flow. The HSMP-386J-BLKG is most often used in applications that require high-speed switching and rectifying. This type of diode is popular in power supply systems, RF receivers, RF mixers, and amplifiers. As a power supply diode, it can be used to rectify AC signals to DC power as well as provide DC to AC power. As an RF receiver, the diode can be used to filter undesired signals and amplify the desired ones. In RF mixers and amplifiers, the diode can be utilized to provide amplification and gain control. The working principle of the HSMP-386J-BLKG is known as its Gunn Effect, which is based on selective electric field-accelerated electron flow in a semiconductor material. This phenomenon causes electric charges to be separated by the electric field, leading to the electric current flowing through the circuit. The electric field of the diode is determined by the voltage applied to the anode gate and the cathode gate. When a certain voltage of the gates is reached, the electron flow will start flowing. The voltage of the gates must be larger than the built-in voltage of the HSMP-386J-BLKG in order to produce the electron flow. The Gunn Effect of the diode is what makes this type of diode suitable for high-speed switching and rectifying. It enables fast switching of current because of the rapid electrical field manipulation, thus allowing the diode to quickly change the current flow direction. This is why the HSMP-386J-BLKG is a perfect choice for applications such as power supplies, RF receivers, and mixers and amplifiers. When selecting the HSMP-386J-BLKG, it is important to keep in mind that it has various factors that can affect its performance. These factors include the diode’s reverse leakage current and capacitance, the temperature coefficient, and the modulation properties. It is important to take these factors into consideration in order to properly select the diode for the desired application. In summary, the HSMP-386J-BLKG is a powerful surface mount power PIPS diode ideal for high-speed and rectifying applications. Its functional principles are based on the Gunn Effect, which enables rapid switching of current due to the electric field’s manipulation. The diode’s performance and selection must take into account factors such as reverse leakage current and capacitance, temperature coefficient, and modulation properties.Overall, the HSMP-386J-BLKG is a versatile selection for many types of applications, especially those in the RF technology field.

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