
Allicdata Part #: | HSMP-489B-TR2G-ND |
Manufacturer Part#: |
HSMP-489B-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN SW LOW INDUCT SOT-323 |
More Detail: | RF Diode PIN - Single 100V 1A SOT-323 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.375pF @ 5V, 1MHz |
Resistance @ If, F: | 2.5 Ohm @ 5mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | HSMP-489B |
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The HSMP-488B-TR2G diode is used for many applications in RF (Radio Frequency) systems. It is a versatile device that has a wide range of uses including low noise amplifiers, power amplifiers, low-noise oscillators, nonreciprocal devices, variable gain amplifiers, and switches. This versatile and powerful device has become increasingly popular with the development of digital communications systems and the need for devices that can perform a variety of tasks.
The HSMP-488B-TR2G diode is a semiconductor device that consists of two thin, parallel layers of type-II superlattice material. The two layers are connected in a unique way to provide high performance characteristics. The first layer is made of a material that is a p-type conductor with a resistivity of up to 8 Ω.cm. The second layer is a n-type conductor with a resistivity of up to 500 Ω.cm. This device is designed to provide low noise, low distortion, high speed, high power handling, and low input capacitance.
The HSMP-488B-TR2G diode works by controlling currents in two directions between the two layers. A signal is applied to the p-side layer, which creates a signal current that flows through the device. The current creates a magnetic field around the device, which produces a switching effect on the n-side layer. The signal current is then diverted from the p-side layer to the n-side layer and back again in a fast, reliable, and efficient manner.
The HSMP-488B-TR2G diode can also be used for active device switching applications. The device can be used for low-noise, low-distortion amplifier switching, for example, in digital signal processors. The device can also be used for ultra-low-power switching, such as in low-power circuit applications. In addition, the device can be used for frequency translation, gain control, and distortion cancellation in RF systems.
The HSMP-488B-TR2G diode is highly stable and has a very high level of reliability. It can operate in temperatures up to 150°C and has a long useful life. The device is also small in size and is compatible with many other components. It can be used in a variety of circuit designs, making it an extremely versatile component.
The HSMP-488B-TR2G diode is a versatile and powerful component that has a broad range of uses in RF systems. It provides high performance characteristics and is reliable and stable. This device can be used for a variety of operational functions, making it an ideal component for many digital communications systems.
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