Allicdata Part #: | ICTE-12RL4G-ND |
Manufacturer Part#: |
ICTE-12RL4G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 12V 21.2V AXIAL |
More Detail: | N/A |
DataSheet: | ICTE-12RL4G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Current - Peak Pulse (10/1000µs): | 70A (8/20µs) |
Base Part Number: | ICTE |
Supplier Device Package: | Axial |
Package / Case: | DO-201AD, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Series: | Mosorb™ |
Voltage - Clamping (Max) @ Ipp: | 21.2V |
Voltage - Breakdown (Min): | 14.1V |
Voltage - Reverse Standoff (Typ): | 12V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS-Diodes are becoming increasingly widely used for protection against transient voltages that may arise due to disturbances in electrical supply networks. This is due to their ability to absorb lightning pulses and other transient voltage events. One such diode is the ICTE-12RL4G, which is an ultra fast, fast acting, and low forward voltage drop silicon diode. In this article, we will discuss the application field and working principle of the ICTE-12RL4G.
The application fields of the ICTE-12RL4G are extensive. It can be used as overvoltage protection against lightning pulses, electrostatic discharge events, and high energy transients such as those caused by the switching of high power semiconductor devices. The ICTE-12RL4G is particularly useful for protecting sensitive electronic components and systems, such as those used in the automotive and aerospace industries.
The ICTE-12RL4G diode works on the principle of transient voltage suppression. This means that when a voltage spike occurs, the diode absorbs the excess voltage, thereby protecting the system from the harmful effects of the voltage spike. This is accomplished through an avalanche process in which the diode conducts a high frequency pulse that results in the redistribution of charge and the absorption of excess voltage. This process is swift and efficient, and enables the diode to readily absorb transient voltages.
The performance of the ICTE-12RL4G is further enhanced by its ultra-fast response time, which is typically between 5-100 nanoseconds. This ensures that the diode is able to react quickly to any transient voltage events that may arise. Additionally, the diode has a low forward voltage drop, which helps to reduce power losses associated with using the diode.
In summary, the ICTE-12RL4G is an ultra-fast and fast acting silicon diode that is used for protection against transient voltage events. It works on the principles of transient voltage suppression, and has a swift response time and low forward voltage drop to enable it to absorb transient voltage events efficiently and effectively. This makes it an excellent choice for protecting sensitive electronics in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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ICTE10CHE3_A/C | Vishay Semic... | 0.27 $ | 1000 | TVS DIODE 10V 14.5V 1.5KE |
ICTE12CHE3_A/C | Vishay Semic... | 0.27 $ | 1000 | TVS DIODE 12V 17.1V 1.5KE |
ICTE15CHE3_A/C | Vishay Semic... | 0.27 $ | 1000 | TVS DIODE 15V 21.4V 1.5KE |
ICTE18HE3_A/C | Vishay Semic... | 0.27 $ | 1000 | TVS DIODE 18V 25.2V 1.5KE |
ICTE8CHE3_A/C | Vishay Semic... | 0.27 $ | 1000 | TVS DIODE 8V 11.6V 1.5KE |
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ICTE15HE3_A/D | Vishay Semic... | 0.25 $ | 1000 | TVS DIODE 15V 20.6V 1.5KE |
ICTE18HE3_A/D | Vishay Semic... | 0.25 $ | 1000 | TVS DIODE 18V 25.2V 1.5KE |
ICTE8HE3_A/D | Vishay Semic... | 0.25 $ | 1000 | TVS DIODE 8V 11.5V 1.5KE |
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ICTE8C-E3/51 | Vishay Semic... | 0.41 $ | 1000 | TVS DIODE 8V 11.6V 1.5KE |
ICTE10-E3/51 | Vishay Semic... | 0.41 $ | 1000 | TVS DIODE 10V 14.1V 1.5KE |
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