ICTE12CHE3_A/D Circuit Protection

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TVS - Diodes is a specialized class of diodes that are designed for transient voltage suppression. In this type of diode, the p-type material forms the anode and the n-type material forms the cathode. These diodes are used to protect sensitive circuit elements from high voltage spikes that develop from ESD or other external sources. ICTE12CHE3_A/D application field and working principle are two major elements that affect the performance of transient voltage suppression diodes.

ICTE12CHE3_A/D Application Field

The ICTE12CHE3_A/D series of TVS diodes is specially designed for protecting RF power amplifiers in the range of 0.5 – 2.3 GHz. These devices provide the best performance and low insertion loss in the application field, where low capacitance and smaller size are required. They have been designed to reduce failure caused by ESD, EFT, surge and load dump.

The TVS Diode series provides an excellent ESD protection level of up to 8 kV, with a peak pulse current rating of 400 Amps. They provide superior protection of up to 25W RF power amplifiers. These devices feature a fast response time (<1ns) and can protect against transient spikes of up to 13 kV. The series also provides excellent RF performance, with a high Level of attenuation in the range of 0.5 to 2.3 GHz.

ICTE12CHE3_A/D Working Principle

The working principle of ICTE12CHE3_A/D TVS diode is based on the avalanche type of breakdown voltage. This diode has a very low dynamic resistance and when a voltage level is reached, the junction of this diode will be saturated and will clamp the voltage. The diode will rapidly resemble a short circuit in order to reduce the voltage level, and then will slowly recover again to its normal resistance level as the power dissipates.

The ICTE12CHE3_A/D series is designed to have high ESD protection, a low clamping voltage, and a very low dynamic resistance. This ensures that it can satisfy both the low insertion loss and the necessary protection level against ESD. The series also features a very fast response time, with a typical surge current rating of 107 A peak pulse.

Conclusion

The ICTE12CHE3_A/D series of TVS diodes can provide superior performance and low insertion loss in the application field of RF power amplifiers. They provide an excellent ESD protection level of up to 8 kV, with a peak pulse current rating of 400 Amps. Additionally, they have a fast response time (<1ns) and can protect against transient spikes of up to 13 kV. The ICTE12CHE3_A/D series also provides excellent RF performance, with a high Level of attenuation in the range of 0.5 to 2.3 GHz. Overall, the ICTE12CHE3_A/D series is an ideal solution for protecting RF power amplifiers in the range of 0.5 – 2.3 GHz.

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