ICTE8CHE3_A/D Circuit Protection

Current - Peak Pulse (10/1000µs):	100A
Base Part Number:	ICTE*
Supplier Device Package:	1.5KE
Package / Case:	DO-201AA, DO-27, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Series:	Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp:	11.6V
Voltage - Breakdown (Min):	9.4V
Voltage - Reverse Standoff (Typ):	8V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Box (TB)

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TVS (Transient Voltage Suppressor) diodes are a common form of over-voltage protection component in advanced electronic systems. They provide a low-cost, long-term protection from spikes that can occur in electrical lines due to lightning, inductive switching, and other sources. The ICTE8CHE3_A/D is one type of TVS diode series manufactured by Taiwan Semiconductor. It is an enhanced version of the ICTE6CHE3 model and offers higher performance in protecting industrial equipment from over-voltage transients. The ICTE8CHE3_A/D combines an internal avalanche diode with a MOSFET source follower, providing the same level of test integrity as the ICTE6CHE3 but with a higher withstand voltage rating (1350V) and lower turn-off current (40mA). The ICTE8CHE3_A/D is suitable for a variety of applications, such as automotive, industrial electronics, consumer electronics devices, consumer electrical appliances, solar energy systems, and medical equipment. It is an ideal component for protecting DC-powered systems, including those in electric vehicles, heating/cooling systems, hybrid drive systems, and motor controllers. The ICTE8CHE3_A/D’s working principle is based on a two-stage Regulated gate voltage (RGV) structure. The first stage consists of an avalanche diode that provides over-voltage protection under transient conditions. The second stage is the MOSFET source follower, which detects the diode’s over-voltage protection action and turns off the MOSFET in order to protect the system from damage. When an over-voltage is detected, the avalanche diode conducts, reducing the voltage swing that can enter the system. The source follower then detects the change in voltage and turns off the MOSFET, thus preventing damage to the system. The ICTE8CHE3_A/D is designed to provide over-voltage protection in industrial environments, with a maximum working voltage up to 1350V. The ICTE8CHE3_A/D is a robust and reliable over-voltage protection solution for high-voltage DC systems. It offers a wide range of protection against transient spikes that can occur as a result of lightning, EMC/RFI interference, or malfunctioning components. The integrated dual-stage protection reduces the risk of damage to the system and increases system reliability. The ICTE8CHE3_A/D is easy to install, and it can be used in a variety of applications where over-voltage protection is required.

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