Allicdata Part #: | IKA10N60TXKSA1-ND |
Manufacturer Part#: |
IKA10N60TXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 11.7A 30W TO220-3 |
More Detail: | IGBT Trench Field Stop 600V 11.7A 30W Through Hole... |
DataSheet: | IKA10N60TXKSA1 Datasheet/PDF |
Quantity: | 475 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 30W |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 115ns |
Test Condition: | 400V, 10A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 12ns/215ns |
Gate Charge: | 62nC |
Input Type: | Standard |
Switching Energy: | 430µJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 30A |
Current - Collector (Ic) (Max): | 11.7A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IKA10N60TXKSA1 is a type of Insulated-Gate Bipolar Transistor, or IGBT. It is a single-mode semi-conductor transistor, which combines the low on-state resistance of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and the high current handling capability of a bipolar transistor. The IKA10N60TXKSA1 is designed to improve the efficiency and reliability of power electronics applications.
An IGBT is an electronic device consisting of three terminals: the gate, collector, and emitter. The IKA10N60TXKSA1 features a vertical structure design and utilizes insulated-gate bipolar technology to offer an improved performance-to-cost ratio over several forms of bipolar transistors. It is ideally suited for use in high-definition TV power supplies and automotive power applications. Additionally, it can be used as a motor drive, switching power supply, as well as a buck power supply.
The working principle of the IKA10N60TXKSA1 is based on the bipolar transistor behavior. When a small voltage is applied to the gate a high current will flow through the collector and emitter. This process is known as biasing. The gate voltage required to turn the transistor on and off can be adjusted by changing the gate voltage. The gate voltage and current can be further modified to provide a more precise control over power flow and reduce power dissipation.
Due to its high current and low on-state resistance, the IKA10N60TXKSA1 can be used in various applications including: switching power supplies, AC to DC converters, and motor drives. The IKA10N60TXKSA1 is particularly useful for switching power supplies and AC to DC converters as it can provide more efficient and reliable operation compared to traditional MOSFETs and other types of transistors.
In motor drives, the IKA10N60TXKSA1 provides a current control capability, allowing it to control the motor speed and torque. Additionally, the IKA10N60TXKSA1 can be used in power electronics applications such as in voltage regulators and in electric and hybrid vehicles.
The IKA10N60TXKSA1 is a reliable and efficient semiconductor transistor. Its combination of low on-state resistance and high efficiency make it an ideal choice for power electronics applications. The IKA10N60TXKSA1 can be used in motor drives, AC to DC converters, and switching power supplies as well as a range of other applications.
The specific data is subject to PDF, and the above content is for reference
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