Allicdata Part #: | IKA15N60TXKSA1-ND |
Manufacturer Part#: |
IKA15N60TXKSA1 |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 14.7A 35.7W TO220-3 |
More Detail: | IGBT Trench Field Stop 600V 14.7A 35.7W Through Ho... |
DataSheet: | IKA15N60TXKSA1 Datasheet/PDF |
Quantity: | 366 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.46790 |
10 +: | $ 1.31985 |
100 +: | $ 1.06067 |
500 +: | $ 0.87147 |
1000 +: | $ 0.72207 |
Power - Max: | 35.7W |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 34ns |
Test Condition: | 400V, 15A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/188ns |
Gate Charge: | 87nC |
Input Type: | Standard |
Switching Energy: | 570µJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 45A |
Current - Collector (Ic) (Max): | 14.7A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IKA15N60TXKSA1 is a single IGBT module designed to enable efficient power management in a wide range of applications. The device is designed to enable constant switching with zero current at turn-off for low loss energy conversion. It has a low on-state voltage drop and a high speed reverse recovery time to ensure low power dissipation and reduce switching losses.
The IKA15N60TXKSA1 is based on the latest generation of IGBTs which can handle higher voltage and higher current applications and has improved conduction and switching capabilities. It features an advanced 2D silicon structure that enables superior thermal management and improved performance.
IKA15N60TXKSA1 Applications and Working Principle
The IKA15N60TXKSA1 IGBT module has a wide range of applications due to its superior thermal management and high switching speed. It can be used in motor drives, switched mode power supplies, and lighting applications. It is also suitable for high power applications such as motor drives, renewable energy production and distribution, and air conditioning systems.
The working principle behind this IGBT module is based on the use of a combination of gate, collector and emitter pins for controlling the current flow in and out. To control the current, the gate pin is driven by a gate signal, which is then amplified by the collector output and modulated by the emitter pin. When the gate signal is high, the collector pin is pulled high which drives current into the emitter pin, allowing the IGBT to operate in its on state.
When the gate signal is low, the collector pin is pulled low and no current is allowed to flow through the emitter pin. This allows the IGBT to turn off and operate in its off state. The IGBT also has a reverse recovery time, which is the time taken for the module to switch off after the gate signal goes low.
Advantages of IKA15N60TXKSA1
The IKA15N60TXKSA1 IGBT module has several advantages over other types of power management devices. It has low on/off switching losses, which improves efficiency and reduces energy consumption. Additionally, it has a high speed reverse recovery time which gives a fast response time and helps reduce power consumption.
The IKA15N60TXKSA1 also has a high current carrying capacity and improved thermal management which offers better performance in high power applications. Finally, it is designed with advanced 2D silicon structure which provides superior thermal management and reliable operation.
Conclusion
The IKA15N60TXKSA1 IGBT Module is an important device in the field of power management. It has a wide range of applications due to its superior thermal management and high switching speed. It also has several advantages over other types of power management devices, such as low on/off switching losses, high current carrying capacity, improved thermal management, and an advanced 2D silicon structure that provides superior thermal management and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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