IKA10N65ET6XKSA2

The IKA10N65ET6XKSA2 is a single-chip IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is part of the company’s IKW10N65ET6XKSA2 range of devices, which are designed to increase the efficiency and reliability of power semiconductor applications. With respect to its operating principle, the IKA10N65ET6XKSA2 works by combining the properties of an insulated gate FET (IGFET) with those of a conventional bipolar transistor in a single device. The insulated gate terminal behaves like an IGFET and allows electrons to travel from anode to cathode in order to switch the transistor on and off. The bipolar transistor provides the necessary current gain for the device to produce power gain. The IKA10N65ET6XKSA2 is often used in applications where high voltage and high current are required, such as in motor drive systems, uninterruptible power supplies, variable speed drives, converters, and AC motor drives. Its high voltage and power capability helps these applications leverage the utmost performance and reduce the total cost of ownership. The IKA10N65ET6XKSA2 is designed specifically to be low in both on-state resistance and switching speed, making it an ideal choice for high-power applications that require rapid switching. It also offers high-voltage capabilities and low losses, which makes it suitable for a wide range of applications.The IKA10N65ET6XKSA2 also provides excellent noise immunity and is designed to handle a wide range of operating temperatures. Its low thermal resistance allows it to operate in temperatures as low as -40°C and as high as +150°C. The device also features a reverse voltage protection circuit, which helps protect the transistors from overvoltage transients. This feature helps protect the application from unexpected power transients, which can damage the IGBT or cause interruptions in service. In sum, the IKA10N65ET6XKSA2 single-chip IGBT has proven itself to be an invaluable component in a wide range of power semiconductor applications. It combines the benefits of insulated gate FETs and conventional bipolar transistors, delivering exceptional voltage and power capabilities, as well as fast switching and low losses. Its low thermal resistance also makes it suitable for a wide range of temperatures, while its reverse voltage protection feature helps safeguard against unexpected power transients.

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IKA15N60TXKSA1	Infineon Tec...	1.61 $	366	IGBT 600V 14.7A 35.7W TO2...
IKA10N65ET6XKSA2	Infineon Tec...	1.13 $	1000	IGBT 650V 15A TO220-3IGBT...
IKA15N65ET6XKSA2	Infineon Tec...	1.32 $	1000	HOME APPLIANCES 14IGBT Tr...