Allicdata Part #: | IKA15N65F5XKSA1-ND |
Manufacturer Part#: |
IKA15N65F5XKSA1 |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 14A 33.3W PG-TO220-3FP |
More Detail: | IGBT 650V 14A 33.3W Through Hole PG-TO-220-FP |
DataSheet: | IKA15N65F5XKSA1 Datasheet/PDF |
Quantity: | 423 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.58760 |
10 +: | $ 1.42443 |
100 +: | $ 1.14484 |
500 +: | $ 0.94056 |
1000 +: | $ 0.77933 |
Power - Max: | 33.3W |
Supplier Device Package: | PG-TO-220-FP |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 50ns |
Test Condition: | 400V, 7.5A, 39 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/150ns |
Gate Charge: | 38nC |
Input Type: | Standard |
Switching Energy: | 130µJ (on), 40µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 45A |
Current - Collector (Ic) (Max): | 14A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKA15N65F5XKSA1 is an advanced insulated gate bipolar transistor (IGBT) module, which is produced and marketed by an electronics manufacturer. It is a single-package device, meaning it contains all the components and circuitry necessary for operation, such as N-type MOSFET, insulated gate bipolar transistor (IGBT), inductors and capacitors. This module has a wide range of applications in the automation, communications, industrial and home entertainment industries.
From a technical perspective, the device is suitable for high-power applications due to its wide bandgap semiconductor construction and a maximum current rating of 1650A. Furthermore, it has a blocking voltage rating of 650V and a low on-state voltage drop. The device also has a built-in protection feature, which helps protect equipment against over-voltage and short-circuit.
The device\'s working principle is based on the principle of an insulated gate bipolar transistor (IGBT). It consists of a semiconductor N-type MOSFET, which controls the flow of current from an external power source. This MOSFET forms a closed loop with the insulated gate bipolar transistor and is responsible for actuating the power flow, in order to achieve the desired switching effects. The MOSFET is also connected to the control circuitry, which can modify the properties of the IGBT by changing the voltage applied to the transistor.
The device is further enhanced by the presence of an auxiliary diode, which prevents the current from flowing in the reverse direction. This diode helps improve the protection of the device against short circuits or other unwanted electrical effects. Additionally, by utilizing a sophisticated insulation method, it helps boost efficiency and reduce overall cost.
Ultimately, the IKA15N65F5XKSA1 is an ideal device for applications in the automation, communications, industrial and home entertainment sectors. It offers enhanced performance, low EMI and high power efficiency. Furthermore, its single-package design provides users with the convenience of a complete system, that can be easily installed and used.
The specific data is subject to PDF, and the above content is for reference
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