IMD10AMT1G Discrete Semiconductor Products |
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Allicdata Part #: | IMD10AMT1GOSTR-ND |
Manufacturer Part#: |
IMD10AMT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS SC74R |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | IMD10AMT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 13 kOhms, 130 Ohms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V / 68 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 285mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SC-74R |
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The IMD10AMT1G pre-bias transistor array is a type of bipolar junction transistor (BJT) array device developed by ON Semiconductor. It is designed to replace standard discrete BJT solutions, achieving better performance and improved reliability.
The IMD10AMT1G is an array of four NPN transistors that can be pre-biased internally, eliminating the need for additional bias resistors and allowing for superior voltage and/or current control. The device features a common emitter design, integrated ESD protection, and space-saving 6-pin SOT563 packaging.
The pre-bias feature of the IMD10AMT1G is especially useful in applications where dynamic range is critical, such as radio communications, optical networks, and lighting control systems. This feature allows for precise variation of voltage and current output over a wide range.
The IMD10AMT1G is designed to be used as a current or voltage amplifier, or as a switch, providing high-speed switching with low-noise operation. It can be used in signal processing applications such as sample-and-hold circuits, power supply regulation (such as current regulation), and signal conditioning.
The working principle of the IMD10AMT1G array is based on the simple principles of BJT circuit operation. Input bias current is applied to the base of the NPN transistor, creating a voltage drop across the base-emitter junction that induces current flow in the collector-emitter segment. This current flow can be adjusted by varying the bias current.
The IMD10AMT1G is designed for low-cost, small-footprint applications, offering outstanding thermal stability and superior power dissipation compared to standard BJT arrays. Its integrated ESD protection makes it ideal for use in systems that must withstand environmental stresses.
In summary, the IMD10AMT1G is a pre-biased array of four NPN transistors featuring excellent performance, reliability and ease of use. It can be used in a wide range of applications, such as radio communications, optical networks, power supply regulation, and signal conditioning. It provides high-speed switching with low-noise operation, making it a valuable addition to any design.
The specific data is subject to PDF, and the above content is for reference
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