IMD16AT108 Allicdata Electronics

IMD16AT108 Discrete Semiconductor Products

Allicdata Part #:

IMD16AT108TR-ND

Manufacturer Part#:

IMD16AT108

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: IMD16AT108 datasheetIMD16AT108 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
Base Part Number: MD16A
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 100 kOhms, 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA, 500mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IMD16AT108 is a semiconductor device that is classified among Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It is a pre-biased array of NPN transistors that are commonly used in many electronic applications. It consists of eight high-density pre-bias multi-purpose NPN transistors. It has a higher current gain, higher breakdown voltage, higher frequency response, high-speed switching and low ON resistance.

The maximum voltage rating of IMD16AT108 is up to 40V, and the maximum collector-emitter voltage is up to 1.5V. The operating temperature of this device is between -35°C to +85°C. It is made up of plastic material and has a mold body that ensures better protection from harsh environments. It is usually available in an 8 lead single in-line package, and also other packages such as plastic encapsulated, surface mount and through-hole packages.

The application field of IMD16AT108 can include electronics, communications, instrumentation, power supply and motor control. It can also be applied in circuit protections like peak load overvoltage, under voltage and over temperature to prevent and protect the system. It can be applied in the design of power converters, lighting ballasts, AC motor controllers, switching power supplies and industrial microprocessor circuits.

The working principle of IMD16AT108 is based on the idea that when a current is applied to the base, the collector current increases, thus providing a voltage gain. When a voltage is applied to the base, the collector current reduces, thus providing a current gain. To ensure correct operation of the device, the polarity of the collector-emitter voltage and the output current should remain the same. Additionally, the base-emitter junction should remain forward-biased and the emitter-base junction should remain reverse-biased. The device can be operated at high frequencies by using a single transistor.

IMD16AT108 is a versatile, high-performance device and is used in many electronic applications. It has a wide range of applications, including circuit protection and design of power converters, lighting ballasts, AC motor controllers and industrial microprocessor circuits. It is designed for high current gain, high breakdown voltage and high-speed switching, and can be operated at high frequencies.

The specific data is subject to PDF, and the above content is for reference

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