
Allicdata Part #: | IMD1AT108-ND |
Manufacturer Part#: |
IMD1AT108 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.09000 |
10 +: | $ 0.08730 |
100 +: | $ 0.08550 |
1000 +: | $ 0.08370 |
10000 +: | $ 0.08100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
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IMD1AT108 is a type of pre-biased bipolar junction transistor (BJT) arrays. It allows for improvements in the performance of automated test equipment for a number of different applications. This article will discuss the application fields and working principle of the IMD1AT108.
The IMD1AT108 is a pre-biased transistor array composed of two pairs of matched transistors. Each pair is formed from dual NPN transistors which are matched for resistance-capacitance (RC) parameters. The device is designed for high speed operation and is relatively low power, which makes it an attractive option for applications requiring high-bandwidth signal transmission.
The device is designed for use in a range of applications, including automotive, medical, industrial and consumer electronics. The IMD1AT108 can be used as a switching device in motor control, signal amplification, signal-processing circuits, and power conversion. It can also be used as an amplifier or oscillator in various applications, including wireless communication, control systems and electronic instruments.
In terms of working principle, the IMD1AT108 works by providing a reference voltage to the gate of each transistor pair. This reference voltage serves as the gate bias for both transistors in the pair. When one transistor of the pair is switched on, both transistors in the pair will be activated, thus providing the required signal.
The IMD1AT108 has two types of optional features. It can be used in single-ended or push-pull configurations, depending on the application. Additionally, the device has a ‘self-biasing’ feature. This allows for automatic adjustment of the gate bias, ensuring more accurate and efficient operation.
The IMD1AT108 is a very useful device for a number of applications. It can be used in a variety of configurations, and its ability to provide an adjustable reference voltage makes it capable of providing precision switching and signal conditioning. The device contains two pairs of matched transistors, and it is designed for high speed operation. It can also be used in single-ended or push-pull configurations, and it has a self-biasing feature which ensures more accurate and efficient operation.
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