IMH10AT110 Discrete Semiconductor Products |
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Allicdata Part #: | IMH10AT110TR-ND |
Manufacturer Part#: |
IMH10AT110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL NPN SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | IMH10AT110 Datasheet/PDF |
Quantity: | 156000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
Base Part Number: | *MH10 |
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The IMH10AT110 is a pre-biased BJT array device that is used in a variety of applications. It is a versatile device that can be used for more than just switching applications. It is capable of both analog and digital operations including drive, power, and precision control.
The IMH10AT110 is composed of two NPN transistors connected in a Darlington configuration. This allows it to have excellent gain and high input impedance. Each transistor is individually pre-biased in order to minimize power consumption and maximize efficiency. The device is designed to work at relatively low voltage and current levels, making it ideal for mobile and battery powered applications.
The main application of the IMH10AT110 is switching. It can be used to switch a variety of signals such as digital or analog. It is also suitable for use in power amplifiers and RF linear amplifiers. As well, it is useful for driving and controlling small motors.
The working principle of the IMH10AT110 is based on the Darlington configuration of the two transistors. Each of the transistors is biased with a predetermined voltage and current in order to reduce power consumption. The current flow between the two transistors is what creates the switching action. When the input signal is applied, it causes current to flow through the lower transistor, which in turn activates the upper transistor, resulting in a switch action.
The IMH10AT110 is a versatile device that can be used for a variety of applications, including switching, power, amplifiers, and small motor control. Its pre-biased output allows for reduced power consumption and high efficiency. The working principle of the device is based on the Darlington configuration of the two transistors, where the current flow between them creates the switching action.
The specific data is subject to PDF, and the above content is for reference
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