IMH14AT108 Allicdata Electronics
Allicdata Part #:

IMH14AT108TR-ND

Manufacturer Part#:

IMH14AT108

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL NPN SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: IMH14AT108 datasheetIMH14AT108 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09714
6000 +: $ 0.09126
15000 +: $ 0.08537
30000 +: $ 0.07850
Stock 3000Can Ship Immediately
$ 0.11
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MH14
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IMH14AT108 is a pre-biased, quad, transistor array with two NPN and two PNP transistors. It is manufactured by STMicroelectronics and is designed to save space on printed circuit boards. This device can be used for a wide range of applications and is particularly suited for low power applications.

The IMH14AT108 consists of an integrated circuit (IC) which contains four transistors, two PNP and two NPN transistors. Each transistor is pre-biased with a gain of approximately 100. The device has a maximum power dissipation of 150mW, operating at a maximum junction temperature of 150°C, with a maximum supply voltage of 18V. The storage temperature range of the device is -55°C to +150°C.

The device can be used in various applications, such as switching, amplifier, and logic support circuits. The pre-biased setting of the attack transistors helps to simplify the circuit design, while the low power dissipation minimizes the power loss caused by the operation of the device. Additionally, the IMH14AT108 can be used in a wide range of low power applications, due to its high gain and low power dissipation.

The working principle of the IMH14AT108 is fairly simple. When an input voltage is applied to the base of either the PNP or NPN transistors, the transistor will conduct and turn on the output. When the input voltage is removed, the transistor will turn off the output. The amount of current that can be delivered to the output is determined by the gain of the transistor, which is typically around 100. The output of the device can be connected to other common logic gates, such as NOR, NAND, and XOR gates, to provide a variety of different logic functions.

In conclusion, the IMH14AT108 pre-biased array is a versatile device that can be used in a variety of applications. It is easy to implement, due to its pre-biased setting, and low power dissipation. Furthermore, its application range extends to low power applications, due to its high gain and low power dissipation. The working principle of the device is simple, allowing it to be implemented in many different types of logic applications.

The specific data is subject to PDF, and the above content is for reference

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