Allicdata Part #: | IMH15AT110-ND |
Manufacturer Part#: |
IMH15AT110 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL NPN SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | IMH15AT110 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05623 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
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Transistors - Bipolar (BJT) - Arrays, Pre-Biased
The IMH15AT110 is a pre-biased two-stage amplifier integrated circuit (I G C). This integrated circuit is part of the bipolar junction transistor (BJT) family. It is designed for low-frequency, wideband amplifier applications.
The Application Field for the IMH15AT110
The IMH15AT110 is a high-performance dual amplifier that is ideal for use in RF and wireless communication applications. It is especially suitable for low-noise amplifiers, low-power linear amplifiers, low-power audio amplifiers, RF amplifiers, digital IF amplifiers, and low-noise preamplifiers. The IMH15AT110 is designed to operate over the frequency range of 0.5 Hz to 2.5 GHz.
The Working Principle of the IMH15AT110
The IMH15AT110 fundamentally operates as two identical amplifiers in parallel. Each amplifier contains two stages: a differential amplifier and an emitter-follower stage. The differential amplifier stage has two input transistors, connected in a differential configuration, that amplify the small differential voltage between the input terminals. This amplified output voltage is then fed to the emitter-follower stage, which serves to further amplify the input signal. The output of the emitter-follower stage is the output of the amplifier.
The IMH15AT110 includes two active biasing networks that ensure reliable operation. These bias networks self-adjust the bias level to ensure optimal performance of the amplifiers, ensuring that the transistors always function within the saturation region. The bias networks also serve to reduce noise and improve the linearity of the amplifier.
The IMH15AT110 also includes a “Secondary Bias” feature, which provides protection against excessive junction temperature and over-current conditions. This feature automatically reduces the bias voltage when an excessive junction temperature or excessive current is detected, providing extra protection against damage during extreme conditions.
Conclusion
The IMH15AT110 is an ideal choice for low-frequency, wideband amplifier applications. Its integrated two-stage amplifier and active bias networks ensure reliable operation, improved linearity, and reduced noise. Its Secondary Bias feature adds an extra layer of protection against excessive junction temperatures and over-current conditions. The IMH15AT110 is a highly recommended choice for a variety of RF and wireless communication applications.
The specific data is subject to PDF, and the above content is for reference
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