IPC014N03L3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC014N03L3X1SA1-ND

Manufacturer Part#:

IPC014N03L3X1SA1

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 2A SAWN ON FOIL
More Detail: N-Channel 30V 2A (Tj) Surface Mount Sawn on foil
DataSheet: IPC014N03L3X1SA1 datasheetIPC014N03L3X1SA1 Datasheet/PDF
Quantity: 1000
103445 +: $ 0.09235
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: OptiMOS™
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die
Description

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The IPC014N03L3X1SA1 is a type of metal oxide semiconductor field effect transistor (MOSFET). This particular transistor belongs to a subfamily of FETs known as single transistors that are typically used in switches and digital logic circuits. It is a 25V rated device with a 12A continuous current rating and a maximum power dissipation of 50W.

MOSFETs are used in a wide variety of applications, and their function is to act as electronic switches for either AC or DC circuits. They can be used to control the speed of electric motors, the intensity of LED lighting, audio signals, and many other types of electric devices. In the case of the IPC014N03L3X1SA1, it is designed to be used in high power switching applications. It is also suitable for use in amplifiers, PWM circuits, and many other kinds of electric and electronic applications.

The working principle of a MOSFET is relatively simple in concept; a voltage is applied to the gate of the MOSFET which then controls the current flow through the device. When the gates of the MOSFET is at a low voltage, the transistor is off and the current flowing through is zero. However, when the voltage at the gate is increased, the transistors become enabled and the current can start to flow from the source to the drain. This current is then used to control the output device, such as a motor, LED light, or amplifier, to produce the desired effect.

The IPC014N03L3X1SA1 has a maximum drain-source breakdown voltage of 25V, which means that it can handle a voltage of up to 25V across the source and drain at any given time. It also has a maximum gate-drain source of 18V, meaning that the gate voltage needs to be at least 18V in order to turn on the MOSFET. This is an important factor to keep in mind when planning the design of a circuit employing this MOSFET.

In many applications, a single MOSFET is all that is needed to provide the desired control. However, in some cases, such as with amplifiers, multiple MOSFETs are used in order to get higher current capacity and better performance. In this case, the IPC014N03L3X1SA1 can be used in conjunction with other similar transistors in order to increase the overall current and power handling capability.

In summary, the IPC014N03L3X1SA1 is a 25V rated MOSFET capable of handling a maximum current of 12A and a maximum power dissipation of 50W. It can be used in many different applications, including high power switching, audio amplification, and LED light intensity control. It is important to keep the maximum drain-source breakdown voltage and the maximum gate-source voltage in mind when designing a circuit employing this device.

The specific data is subject to PDF, and the above content is for reference

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