Allicdata Part #: | IR2213SPBF-ND |
Manufacturer Part#: |
IR2213SPBF |
Price: | $ 4.59 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER HIGH/LOW SIDE 16SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-SOIC |
DataSheet: | IR2213SPBF Datasheet/PDF |
Quantity: | 1530 |
1 +: | $ 4.17060 |
10 +: | $ 3.76803 |
100 +: | $ 3.11982 |
500 +: | $ 2.71670 |
1000 +: | $ 2.36616 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 12 V ~ 20 V |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Current - Peak Output (Source, Sink): | 2A, 2.5A |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 1200V |
Rise / Fall Time (Typ): | 25ns, 17ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOIC |
Base Part Number: | IR2213SPBF |
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The IR2213SPBF is an integrated gate driver from Infineon Technologies which is used in multiple applications and mainly serves as an interface between microcontrollers and power module gate drivers. It is a highly integrated gate driver that provides both the high and low side outputs with independent voltage and current provisions which offer the system designer a more flexible design option. This integrated gate driver is designed to provide both a high-side and a low-side output and has been successfully used in a variety of consumer and industrial applications like solar inverters and motor control systems.
This IR2213SPBF is a DirectFET MOSFET gate driver that has been specifically designed to drive either N-channel or P-channel power MOSFETs and IGBTs. It has a wide range of operating voltages, from 2.5V up to 18V, and features a wide operating temperature range of -40C to 125C. It includes pre-driver circuits, bootstrap diodes and gate resistors, thereby incorporating the majority of discrete components used in power switch applications. In addition, it includes under-voltage detection and internal short circuit protection which eliminates the need for additional circuitry or components.
The working principle of the IR2213SPBF is based on the four independent CMOS drivers which are used to control the power switch. The logic output INH is brought low to enable the device and the logic inputs of the CMOS drivers are allowed to control the power switches. Upon the application of the appropriate logic levels to the respective gates of the power switch, the power switch is turned on or off depending on the logic inputs. The bootstrap voltage is used to provide power to the internal gate driver and is generated by the same gate driver, thus eliminating the need for an external bootstrap circuit. The pre-drivers are designed to highly drive the gate more quickly and precisely, with a six nano-second switching time and an output current of up to 28mA.
The IR2213SPBF integrated gate driver is widely used in various applications. It is used in consumer and industrial applications including voltage inverters, automotive applications, power supplies, motor control, lighting and solar energy systems. The main advantage of this gate driver is its independent voltage and current provisions which provide the system designer with a more flexible design option. Another advantage of this driver is that it includes pre-driver circuits, bootstrap diodes and gate resistors, thereby incorporating the majority of discrete components used in power switch applications.
In summary, the IR2213SPBF integrated gate driver is a highly reliable and cost-effective device. Its wide range of operating voltages and a wide operating temperature range make it ideal for a number of consumer and industrial applications, including the automotive and solar energy industries. It has the ability to reduce the complexity and cost of system design by including all the necessary discrete components used in power switch applications. Lastly, it has a maximum switching time of six nanoseconds and an output current of up to 28mA which makes it suitable for applications where fast and efficient switching is required.
The specific data is subject to PDF, and the above content is for reference
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