IR2233SPBF

Current - Peak Output (Source, Sink):	250mA, 500mA
Base Part Number:	IR2233SPBF
Supplier Device Package:	28-SOIC
Package / Case:	28-SOIC (0.295", 7.50mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	125°C (TJ)
Rise / Fall Time (Typ):	90ns, 40ns
High Side Voltage - Max (Bootstrap):	1200V
Input Type:	Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	6
Channel Type:	3-Phase
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tube

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Overview of IR2233SPBF

The IR2233SPBF is a high voltage, high current gate driver IC with a wide range of applications. The device is suitable for driving IGBTs and MOSFETs in medium to high power applications, including AC/DC power supplies and solar inverters, as well as motor control and industrial machinery. The device is designed to provide enhanced gate driving capabilities, including low power consumption, high speed switching, and low signal loss.

Features

The IR2233SPBF features include:• High voltage drive capability (18V to 800V)• High current capability (up to 5A)• Low power consumption• High speed operation (up to 5MHz)• Low signal loss• Undervoltage lockout (UVLO)• Overvoltage protection• Short circuit protection • Adaptive deadtime control• Open-drain output• Electrostatic discharge protection

Application Fields

The IR2233SPBF is an ideal solution for driving high power IGBTs and MOSFETs in medium to high power applications. It is suitable for use in a variety of applications, including AC/DC power supplies, solar inverters, motor drives, and industrial machinery. The device can also be used in low power applications, including automotive lighting, medical devices, and battery management.

Working Principle

The IR2233SPBF is a high voltage, high current gate driver IC that utilizes both P-channel and N-channel transistors for its output stages. The device features an under-voltage lockout (UVLO) for enhanced protection and an adaptive deadtime control for improved performance. The output channels are combined in a high-speed differential amplifier. When a voltage difference is detected between the two outputs, a high or a low signal is sent to the CMOS gate output, thus driving the power transistor. The device also features short circuit protection, overvoltage protection, and electrostatic discharge (ESD) protection for increased reliability.

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