Allicdata Part #: | IR2233-ND |
Manufacturer Part#: |
IR2233 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER 3-PHASE BRIDGE 28-DIP |
More Detail: | Half-Bridge Gate Driver IC Inverting 28-PDIP |
DataSheet: | IR2233 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Peak Output (Source, Sink): | 250mA, 500mA |
Base Part Number: | IR2233 |
Supplier Device Package: | 28-PDIP |
Package / Case: | 28-DIP (0.600", 15.24mm) |
Mounting Type: | Through Hole |
Operating Temperature: | 125°C (TJ) |
Rise / Fall Time (Typ): | 90ns, 40ns |
High Side Voltage - Max (Bootstrap): | 1200V |
Input Type: | Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 6 |
Channel Type: | 3-Phase |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tube |
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In the field of power management ICs (PMICs), gate drivers play an important role in switching power transistors, converting slow input signals into high-frequency signals suitable for controlling power transistors. IR2233 is one of the most commonly used power gate drivers, developed by IR (International Rectifier). In this article, we will discuss IR2233\'s application field, its working principle and the advantages and disadvantages associated with it.
IR2233 is a high-side gate driver IC used to control a wide variety of MOSFET and IGBT power transistors. It’s typically used in a half-bridge circuit (where two switches are used to control the same output) and is designed to switch power in applications such as DC-DC converters, motor control, and power supplies. It can also be used in other power electronics applications, such as Class D and E amplifiers, AC inverters, and renewable energy converter systems.
The IR2233 gate driver is designed to deliver high-speed switching performance with minimal propagation delay, allowing for faster switching frequencies and reduced power dissipation. The gate driver operates at a peak frequency of 180 kHz, and can be configured with a minimum driver dead time of 0.8 μs to guarantee simultaneous MOSFET on/off transitions during a half-bridge switching cycle. The IR2233 also has several other features, including under voltage (UV) lockouts, trailing edge blanking (TEB) to protect against shoot-throughs, and over-voltage protection (OVP) to protect against surges.
The working principle of the IR2233 gate driver is based on the principle that when a signal is applied, the base-emitter junction of the underlying transistor turns on and builds up a charge. This charge is, in turn, transferred to the gate of the power transistor and then dissipated through the load to complete the circuit. When the input signal is removed, the base-emitter junction turns off and the accumulated charge then dissipates from the gate to ground, thereby turning the power transistor off.
The IR2233 gate driver has several advantages, including its ability to increase switching frequency, allowing for faster switching and lower power dissipation. Additionally, the gate driver is designed to provide input signals with a minimal propagation delay, for faster switching and better throttle response in applications such as motor control and DC-DC converters. The UV lockouts can also provide extra protection against low-voltage conditions, while the OVP circuitry can protect the power transistor against over-voltage transients.
The IR2233 driver also has several disadvantages. Its relatively high on-resistance of 8.5 ohms can cause significant power loss in high-load applications, and thus reduce overall efficiency. Additionally, the driver is limited to 180 kHz switching frequency, which limits its potential applications in today’s applications that require even faster switching speeds.
Overall, the IR2233 gate driver is a versatile and reliable power switch driver for a wide variety of applications. It’s designed to deliver high-speed switching performance with minimal propagation delay, allowing for faster switching frequencies and reduced power dissipation. However, its relatively high on-resistance and limited switching frequency can negatively affect its performance in some applications.
The specific data is subject to PDF, and the above content is for reference
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