IR4427

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The IR4427 is a monolithic high- and low-side driver integrated circuit used in power management applications. It features a low operating current, wide supply range, and high output current capability. This makes it well-suited for automotive applications, as well as industrial and consumer applications that require high power efficiency. The IR4427 is used to drive a variety of loads, such as MOSFETs, IGBTs, and Thyristors (SCRs).

The IR4427 is part of Texas Instruments\' portfolio of gate drivers for power management integrated circuits (PMICs). These PMICs provide a small form factor solution for driving gate voltages and controlling the on/off states of power devices, such as FETs, IGBTs, SCRs, and diodes. They are designed to interface with digital logic signals on the low end and high-voltage signals on the high end, and they can be used in both automotive and industrial applications.

The IR4427’s unique design integrates its own bootstrapping circuit, a built-in charge pump, and integrated biasing circuitry. The integrated circuitry minimizes external components and saves board space. Its low supply current and wide input voltage range make it suitable for a range of applications, from automotive to consumer electronics.

The IR4427 can be used to drive both low-side and high-side MOSFETs. On the low side, the IR4427 controls the gate voltage of an N-channel MOSFET. On the high side, it controls the gate voltage of both an N-channel and P-channel MOSFETs. This allows the user to configure the gate voltage of the MOSFETs as required, depending on the application.

The IR4427 also has an adjustable protection feature that allows the user to configure the maximum gate voltage. This feature helps protect and maintain the power device from overvoltage due to a voltage spike, current surge, or other conditions. The IR4427 is protected against over-temperature, over-voltage, and over-current, ensuring reliable operation and longevity.

The IR4427 features an enhanced fast-turn-off circuit and a built-in charge pump. The fast-turn-off circuit reduces the gate-to-source and gate-to-drain voltage, reducing cross-conduction and switching losses and ensuring reliable operation of the power device. The built-in charge pump provides the necessary gate voltage for high-side MOSFETs, which often require a higher voltage than the driver IC can provide.

The IR4427 is well suited for applications that require reliable and efficient operation of power devices. It features a low operating current, wide supply range, and high output current capability, and its integrated bootstrapping and charge-pump circuits minimize external components and save board space. Its adjustable protection feature helps protect power devices from overvoltage due to a voltage spike, current surge, or other conditions. In addition, its fast-turn-off capability reduces cross-conduction and switching losses, making it suitable for a wide range of applications.

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