IR4427STRPBF Integrated Circuits (ICs) |
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Allicdata Part #: | IR4427SPBFTR-ND |
Manufacturer Part#: |
IR4427STRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER DUAL LOW SIDE 8SOIC |
More Detail: | Low-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IR4427STRPBF Datasheet/PDF |
Quantity: | 172500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 6 V ~ 20 V |
Logic Voltage - VIL, VIH: | 0.8V, 2.7V |
Current - Peak Output (Source, Sink): | 2.3A, 3.3A |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | 15ns, 10ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | IR4427SPBF |
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IR4427STRPBF, or dual N-channel power MOSFET driver, is the latest in a series of Gate Drivers manufactured by Infineon Technologies AG. It is designed to drive high-current loads in applications such as DC-DC converters, Motor control, Switch Mode Power Supplies and LED lighting. The device is well-suited for use in a wide variety of environments and conditions due to its wide temperature range (Tj -40°C to 150°C) and high operating voltage range (VIN -13 to 20 V).
The IR4427STRPBF contains dual N-channel power MOSFET drivers and is designed to deliver up to 5-A continuous sink and source current. It provides a PWM control signal that can be programmed to control gate drive speed. Additionally, it provides a high-side overcurrent protection function and a low-side overcurrent protection function to protect the MOSFET from damage due to an excessive load current. The device also includes fault detection circuitry to prevent any potential damage due to overheating and to improve system safety.
The IR4427STRPBF is built on a state of the art process which utilizes low power and high performance power MOSFETs. Its high integrated level enables a wide range of applications and provides a cost effective solution for driving power MOSFETs. Additionally, its small size and low-profile package makes it suitable for use in many space-constrained applications. Furthermore, the device offers improved thermal performance due to the addition of the cooling pad on the underside of the package, which allows heat to dissipate more effectively.
The working principle of IR4427STR is based on the use of dual N-channel power MOSFET drivers which enable the driver to deliver high current to the load while controlling the speed of the gate drive. The IR4427STRPBF can be used to drive a wide range of loads with its 5A of maximum sink and source current. The device also provides a PWM control signal that can be used to adjust and control the speed of the gate drive to provide the best power efficiency when driving power MOSFETs. Additionally, built-in overcurrent protection and fault detection circuitry help to prevent overheating and potential damage due to the excessive load current.
IR4427STRPBF can be used in a wide range of applications such as DC-DC converters, motor control, switch mode power supplies, LED lighting, andmore. Its high integrated level makes it an ideal solution for driving power MOSFETs, as well as for space-constrained applications. Additionally, its high speed, low current consumption and improved thermal performance make it excellent for high power and high switching frequency operations. With its wide temperature range and high operating voltage range, the device is suitable for use in many different types of environments and conditions.
The specific data is subject to PDF, and the above content is for reference
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