IRG4BC30W-STRL

Power - Max:	100W
Base Part Number:	IRG4BC30W-S
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C:	25ns/99ns
Gate Charge:	51nC
Input Type:	Standard
Switching Energy:	130µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Current - Collector Pulsed (Icm):	92A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRG4BC30W-STRL Application Field and Working Principle

The IRG4BC30W-STRL is an Insulated Gate Bipolar Transistor (IGBT) designed primarily for high performance, efficiency, and cost savings in modern switch mode power supplies (SMPS). It is a single IGBT device with a normally open electrical connection. The main feature of the IRG4BC30W-STRL is its extremely low switching loss. This makes it ideal for high performance and power efficiency applications, such as very fast power supply ripple removal, digital signal processing (DSP) circuits, and load-sharing applications.The basic function of the IRG4BC30W-STRL is to provide an electrically-controlled pathway between two conductors. It can be used to block direct current (DC) from passing from one conductor to the other, or it can be used to switch the direction of current flow. It is also used for rectifying AC power for DC applications.The device is characterized by its compact design, high current capacity and low on-state voltage drop. This makes it ideal for high power, high current and high frequency applications such as servers, intelligent power modules (IPM) and other high-end electronics.The working principle of the IRG4BC30W-STRL is similar to other IGBTs and includes the following features:- Low on-state voltage drop. - Low switching losses. - High switching speed.- High current capacity. - Easy to drive with gate drivers.The IRG4BC30W-STRL is based on a vertical structure, with an insulated base layer, insulated gate and the collector up top. The insulated base layer is sandwiched between the substrate layer and the collector region. This forms an electric field (E-field) in the collector, which is modulated by the insulated gate. This modulation controls the current flow between the base and collector regions.When a voltage is applied to the gate, an electric field is generated which repels electrons and causes them to move away from the gate. When this occurs, the current flow in the device is inhibited and the device becomes an insulating device i.e. an IGBT. Without an applied voltage, the electrons move back toward the gate, which in turn allows current to flow through the device. This is how the IGBT acts as a switch.The IRG4BC30W-STRL is an excellent choice for applications requiring high current, fast switching and efficiency. Its low on-state voltage drop and low switching losses make it ideal for any application requiring fast power supply ripple removal and high efficiency operations. Its high current capability and easy to drive gate also make it well-suited for servers, IPMs, and other high-end electronic devices.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description