Allicdata Part #: | IRG4RC10K-ND |
Manufacturer Part#: |
IRG4RC10K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 9A 38W DPAK |
More Detail: | IGBT 600V 9A 38W Surface Mount D-Pak |
DataSheet: | IRG4RC10K Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 9A |
Current - Collector Pulsed (Icm): | 18A |
Vce(on) (Max) @ Vge, Ic: | 2.62V @ 15V, 5A |
Power - Max: | 38W |
Switching Energy: | 160µJ (on), 100µJ (off) |
Input Type: | Standard |
Gate Charge: | 19nC |
Td (on/off) @ 25°C: | 11ns/51ns |
Test Condition: | 480V, 5A, 100 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | IRG4RC10K |
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The IRG4RC10K is a type of insulated gate bipolar transistor (IGBT) used in a variety of electronic circuits. This type of transistor is commonly used in motor applications and power converters. IGBTs are one of the most versatile types of transistors, as they are capable of both high current and voltage, yet offer a low on-state voltage drop. The IRG4RC10K is an example of a single IGBT, as it contains just one collector, emitter, and gate connection. These transistors are chosen because of their superior power handling capabilities.
The IRG4RC10K is made up of a multimode base, a Gate insulated collector and an anti-parallel diode. The Collector collects the current from the base and the voltage from the emitter, which is then sent to the load. The Gate insulated collector works in tandem with the base to provide control of the current and power flow through the transistor. The diode is connected in reverse polarity to the collector and provides additional protection from over-voltage or reverse polarity. The device is further protected through its use of an internal protection circuit.
This type of IGBT is well suited for power applications that require fast switching, reliable operation and high frequency operation. They are also well suited for applications where high-switching speeds are needed, such as in motor control, audio amplifiers and switched mode power supplies. This type of IGBT can also be used in more complex circuits, such as high-voltage converters, DC-to-DC converters and pulse width modulation (PWM) type circuits. The IRG4RC10K is normally used in power converters where the voltage and load must be accurately controlled.
The working principle of the IRG4RC10K is based on the transistor’s ability to transfer electrical energy between two layers of semiconductor material. As voltage is applied between the collector and the gate, a small current is generated through the base and is then transferred to the gate. This current is used to establish a voltage at the gate, which in turn controls the current flow from the collector to the emitter. By controlling this current flow, the output is regulated, ensuring that the desired output is met.
The IRG4RC10K can be used in a variety of applications, providing reliable and efficient power control. These transistors are ideal for switching applications in motor control, power supplies, switches, DC-to-AC inverters, and more. They are also used in high-frequency switching applications for computer processors, automotive power converters, and industrial automation systems.
In summary, the IRG4RC10K is a single insulated gate bipolar transistor (IGBT) that is commonly used in motor applications and power converters. It consists of a multimode base, a Gate insulated collector, and an anti-parallel diode. This type of IGBT provides fast switching, reliable operation and high frequency operation, and finds use in applications such as motor control, audio amplifiers, switched mode power supplies, high-voltage converters, DC-to-DC converters, and pulse width modulation (PWM) type circuits. The working principle of the IRG4RC10K is based on the transistor’s ability to transfer electrical energy between two layers of semiconductor material, while the use of an internal protection circuit gives it further protection from over-voltage or reverse-polarity conditions.
The specific data is subject to PDF, and the above content is for reference
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