IRG4PC60UPBF Allicdata Electronics
Allicdata Part #:

IRG4PC60UPBF-ND

Manufacturer Part#:

IRG4PC60UPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 75A 520W TO247AC
More Detail: IGBT 600V 75A 520W Through Hole TO-247AC
DataSheet: IRG4PC60UPBF datasheetIRG4PC60UPBF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 520W
Switching Energy: 280µJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 39ns/200ns
Test Condition: 480V, 40A, 5 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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The IRG4PC60UPBF is a Silicon IGBT that’s a single device featuring both a very low on- state resistance, high energy efficiency and excellent thermal stability. This IGBT is ideal for applications that require high-current-carrying capacities such as industrial motor drives, variable speed drives, and power supply design. With a wide operating temperature range, low conduction losses and minimal noise, it is a reliable and cost-effective solution for almost any power electronics design.

The IRG4PC60UPBF is a direct-gate driven IGBT which uses a single power supply. Its power supply range is from 10V to 800V, and can provide current from 10A to 7000A. It is rated for an operating temperature range of -55°C to +175°C. The IGBT features a common-emitter reverse polarity protection and an integrated fast-recovery freewheeling diode for inductive loads. It also features lower gate losses which help it to switch at high frequencies and reduce power losses.

In its most basic form, the IRG4PC60UPBF is an IGBT that consists of three major components. There is an anode, a cathode and a gate. The anode and cathode are the two terminals of the device, while the gate is the control terminal. When a small voltage is applied to the gate, it turns the device on and allows current to flow between the anode and cathode. When the gate voltage is removed, the IGBT turns off and the current stops flowing.

This IGBT is particularly suited for applications that require low conduction losses such as battery-powered products, automotive applications, telecom systems and motor drives. It is also suitable for applications that require high-current-carrying capacities such as induction heating, industrial motor drives and adjustable speed drive systems. The IGBT also offers very low gate resistance, allowing higher switching frequencies and active power-loss savings. Furthermore, the IGBT can switch nearly instantaneously with a very low gate capacitance, meaning that the device can operate at very high frequencies. The device also offers good thermal stability and is self-protected against overvoltage and overcurrent conditions.

To make use of the IRG4PC60UPBF properly, it\'s important to understand the basic working principles. The IGBT essentially works via a two-stage process, which involves a power supply and a gate turn-on and turn-off process. The power supply is connected to the anode and cathode of the IGBT and provides the voltage for the device switching. When the gate voltage is applied, the IGBT turns on, allowing current to flow between the anode and cathode. When the gate voltage is removed, the IGBT turns off and the current stops flowing. The IGBT operates efficiently between its on and off states, allowing it to switch quickly and accurately.

The IRG4PC60UPBF is a great single IGBT for high-power applications such as motor drives, variable speed drives and power supply designs. Its low loss conduction, high energy efficiency and excellent thermal stability allow it to be a reliable and cost-effective solution for power electronics design. It also offers very low gate resistance, allowing higher switching frequencies and active power losses savings. Furthermore, the IGBTs can switch nearly instantaneously with a very low gate capacitance, allowing them to operate at very high frequencies.

The specific data is subject to PDF, and the above content is for reference

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