IRG4BC30UDPBF

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International Rectifier’s (IR) IRG4BC30UDPBF is a ceramic-insulated, fast-switching IGBT designed specifically for high-power switching applications. It offers superior immunity to dv/dt-induced degradation while remaining reliable down to 10V. The IGBT offers fast switching capability, extreme low-gate drive power, and low on-state resistance. This makes it an ideal component for use in switch-mode-power-supply (SMPS), motor control, welding, and a wide range of high power circuits that require high current switching.

The IRG4BC30UDPBF IGBT is a non-punch-through construction device of Gen 4 technology. It features an N-channel vertical IGBT on a Direct Copper Bond substrate. The device is driven by an external transistor or power MOSFET and offers superior immunity to dv/dt-induced degradation at the IGBT terminals. The device offers the fast switching capability and very low on-state resistance to achieve higher efficiency designs. It also provides extreme low-gate drive power to reduce the cost and complexity of the design.

The IGBT in the IRG4BC30UDPBF offers superior immunity to dv/dt-induced deterioration. This is achieved through the device’s internal circuitry that minimizes dv/dt-induced current flow through the IGBT terminals. This ensures that the circuit is optimized for high-power, high-current applications. The device also offers extreme low gate drive power to minimize the cost and complexity of the circuit design.

The IRG4BC30UDPBF offers the fast switching capability that is needed for SMPS applications such as brushless DC motor control and uninterruptible power supplies. The device is designed to turn on quickly and provide the high current needed for switching. It also offers low on-state resistance to improve the efficiency of the design. The fast switching capability and low on-state resistance make the IRG4BC30UDPBF ideal for a wide range of high power circuits.

The IRG4BC30UDPBF IGBT is an ideal component for high power switching applications. It offers superior immunity to dv/dt-induced degradation while providing fast switching capability and low on-state resistance. This makes it an ideal component for switch-mode-power-supplies, motor control, welding and a wide range of high power circuits that require high current switching. Additionally, the IGBT features an N-channel vertical IGBT on a Direct Copper Bond substrate and offers extreme low gate drive power to reduce cost and complexity of the design.

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