IRG4PF50WDPBF Allicdata Electronics
Allicdata Part #:

IRG4PF50WDPBF-ND

Manufacturer Part#:

IRG4PF50WDPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 900V 51A 200W TO247AC
More Detail: IGBT 900V 51A 200W Through Hole TO-247AC
DataSheet: IRG4PF50WDPBF datasheetIRG4PF50WDPBF Datasheet/PDF
Quantity: 493
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 493Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 51A
Current - Collector Pulsed (Icm): 204A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Power - Max: 200W
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 71ns/150ns
Test Condition: 720V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An independent researcher in the field of electronics, IRG4PF50WDPBF, works on a variety of applications. This article will explore the application field and the working principle of IRG4PF50WDPBF.

IRG4PF50WDPBF product is an insulated gate bipolar transistor (IGBT) and it is an electronic semiconductor device used as an electronic switch. IGBTs are typically used in applications where high current and low voltage are required and they can also be used in switching power applications as well. The IRG4PF50WDPBF is a single our IGBT module for voltage switching applications.

The IRG4PF50WDPBF product has a wide application field. It is commonly used in UPS (Uninterruptible Power Supplies) and Solar Energy. Its features such as high current capacity, high voltage resistant, low voltage drop and low switching losses make it suitable for many application fields, such as motor control, power conversion, power electronics, and distributed power generation. The low thermal resistance and the integrated fast freewheeling diode with low forward voltage drop provide outstanding no load loss performance and offer high efficiency when used in digital inverter applications.

In terms of its working principle, IRG4PF50WDPBF, as an IGBT, is a three terminal device, consisting of a source (S), gate (G) and drain (D). All three terminals must be properly biased to turn on the device and to switch high voltages and high current. The two high power terminals, the source and the drain, are isolated from each other by a wide and heavily doped N-type drift region. The control terminal acts as a gate between source and drain and allows current to pass if the gate potential is above a certain voltage threshold.The logic level at the gate determines the output current and the logic level is then determined by an external circuit. Gate Voltages of above 10V will turn on the device allowing current to pass and low gate voltage will block current.

In conclusion, the IRG4PF50WDPBF product has wide application fields and its working principle follows the normal IGBT fundamentals. This is one of the most commonly used IGBTs used in the industrial and commercial sectors and is frequently used in power electronic applications. It is useful and highly efficient device in general.

The specific data is subject to PDF, and the above content is for reference

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