Allicdata Part #: | IRKC71/12A-ND |
Manufacturer Part#: |
IRKC71/12A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE MODULE 1.2KV 80A ADD-A-PAK |
More Detail: | Diode Array 1 Pair Common Cathode Standard 1200V 8... |
DataSheet: | IRKC71/12A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 80A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10mA @ 1200V |
Mounting Type: | Chassis Mount |
Package / Case: | ADD-A-PAK (3) |
Supplier Device Package: | ADD-A-PAK® |
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The IRKC71/12A is a bidirectional silicon switch array with ultra-low turn-on and turn-off times. It is an integrated circuit designed to provide efficient switching and triggering of various higher power applications.
Designed for high-performance, the IRKC71/12A has a capable control voltage range from -12V to +12V and a maximum junction temperature of 175°C. This array also offers a wide operating temperature range from -40°C to 125°C and is rated for a maximum operating voltage of 100V.
The IRKC71/12A is part of a family of switching arrays manufactured by Infineon Technologies. The IRKC71/12A includes a total of twelve separate channels, providing greater flexibility and performance than traditional one or two-channel switching arrays. The twelve isolated channels can individually operate with their own separate supply line and control voltage.
At the core of the IRKC71/12A is a heterojunction bipolar transistor (HBT) array consisting of two transistors per channel. This array of transistors has ultra-low turn-on and turn-off times and is capable of carrying a peak current of up to 20A. The integrated circuit also includes additional protection devices to guard against damage from overvoltage and overcurrent.
The IRKC71/12A application field makes it suitable for use in high-performance power supplies, digital power system controllers, and power converters. The array also works well in protection circuits that monitor current faults in sensitive equipment, as well as in digital amplifier applications needing fast switching.
In terms of working principle, the cores of each of the twelve channels within the IRKC71/12A consist of two transistors each, where one is an NPN and the other an PNP. These transistors are then connected to a voltage-controlled gate. This gate is then responsible for controlling the current flow between these two channels, with the voltage across the two enabling it to be switched on or off.
When the voltage at the gate is lower than the voltage of the base of the NPN transistors, the transistor holds open, leading to a low-resistance path between the two terminals. This allows current to flow between them. On the other hand, when the voltage at the gate is higher than the voltage at the base of the PNP transistors, the transistor holds open, forming a high-resistance path between the two terminals and blocking the current flow.
In conclusion, the IRKC71/12A is a high-performing, versatile array of switching devices designed for efficient control of various electrical applications. It comprises of twelve bidirectional silicon switches, each of which contains two transistors connected to a voltage-controlled gate. This gate is then capable of controlling the current flow between the two terminals, switching the devices on and off as necessary.
The specific data is subject to PDF, and the above content is for reference
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