IRKT41/12A

Current - On State (It (RMS)) (Max):	100A
Base Part Number:	KT41
Package / Case:	ADD-A-PAK (3 + 4)
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max):	200mA
Current - Non Rep. Surge 50, 60Hz (Itsm):	850A, 890A
Current - Gate Trigger (Igt) (Max):	150mA
Voltage - Gate Trigger (Vgt) (Max):	2.5V
Series:	--
Current - On State (It (AV)) (Max):	45A
Voltage - Off State:	1.2kV
Number of SCRs, Diodes:	1 SCR, 1 Diode
Structure:	Series Connection - SCR/Diode
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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IRKT41/12A Application Field and Working Principle

Introduction

IRKT41/12A is a thyristor-based module from Infineon Technologies. It is used in Industrial Electronics, Automation and Electrical Power Control applications. The module is suitable for applications where both main power control and low level switching are required. Its features include high reliability, excellent controllability and capability to switch large currents and high voltages.

Thyristor SCR Modules

Thyristors are semiconductor devices capable of controlling the flow of electricity. They are used in power electronic circuits and control equipment. Thyristor SCR modules are a type of thyristor used for controlling large current and high voltages. These modules have their own logic and internal circuits which allow them to control the flow of electricity in different ways. Thyristor SCR modules are used in a variety of industries such as Industrial Electronics, Automation, Electrical Power Control and other such applications.

IRKT41/12A Working Principle

The IRKT41/12A module uses Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. This technology enables the module to switch large current and high voltages with a high speed. The module comprises two main components, a control unit and a power unit.The control unit consists of a gate driver, which is responsible for controlling the switching the MOSFET, and a voltage comparator which detects the gate voltage and ensures that the output is stable. The gate driver is kept under the control of the voltage comparator by using its internal logic circuit. The power unit consists of two MOSFETs connected in parallel. This helps to reduce the total power dissipation of the module and make it more efficient. The two MOSFETs are connected in a half bridge configuration. This configuration enables the module to switch both the load current and voltage simultaneously. The MOSFETs in the power unit are connected to the gate driver of the control unit. In operation, the IRKT41/12A module is powered by a supply voltage Vcc. This voltage is applied to the gate driver of the control unit. When an input signal is applied from the voltage comparator, the gate driver supplies a control voltage to the MOSFETs in the power unit. The control voltage causes the MOSFETs to switch, allowing current to flow through the load.

Application Field

The IRKT41/12A module is widely used in Industrial Electronics, Automation and Electrical Power Control applications. It is suitable for applications where both main power control and low voltage switching are required. It is widely used in motor control, lighting and power switching applications, particularly in applications where high current and high voltage switching is required.

Conclusion

The IRKT41/12A is a state-of-the-art thyristor-based module from Infineon Technologies. This robust module combines high reliability, excellent controllability and capability to switch large currents and high voltages. It is widely used in Industrial Electronics, Automation and Electrical Power Control applications. The module uses Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology and is suitable for applications where both main power control and low voltage switching are required.

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