IRS21281STRPBF Allicdata Electronics
Allicdata Part #:

IRS21281STRPBFTR-ND

Manufacturer Part#:

IRS21281STRPBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DVR CURRENT SENSE 1CH 8-SOIC
More Detail: High-Side Gate Driver IC Inverting 8-SOIC
DataSheet: IRS21281STRPBF datasheetIRS21281STRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 290mA, 600mA
Base Part Number: IRS21281SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 80ns, 40ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Voltage - Supply: 9 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: High-Side
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRS21281STRPBF is an advanced gate driver for providing easy and fast driving capability for high voltage N-channel MOSFETs or IGBTs in an inverter or PFC (power factor correction) application. It is designed to drive half-bridge and full-bridge MOSFETs or IGBT based conduction, commutation and high frequency applications. The device can deliver up to 40A source and sink of gate current and can also act as high voltage driver, reducing system cost and size.

The IRS21281STRPBF has an integrated bi-directional DC-DC converter which is a key factor in applying the device in an application where reliable and rugged output is needed. This DC-DC converter gives the device the capability of driving a wide range of loads such as low-side and high-side N-channel MOSFETs or IGBTs (insulated gate bipolar transistors). The bi-directional features provide two drivers for every two MOSFETs or IGBTs. This enables the IRS21281STRPBF to produce high voltage up to 700V, which makes it incredibly useful in high voltage applications.

In terms of working principle, the IRS21281STRPBF is designed to sense fast gate drive needs and gate capacitance of the MOSFETs or IGBTs, and supplies high current drive for the applications. Moreover, the device also includes a slew rate control circuit which allows fast turn-off time and extended turn-on time to control the stress on MOSFETs or IGBTs switching. This feature gives the device ability to withstand large voltage transients due to its fast-recovering internal DC-DC converter.

The IRS21281STRPBF also incorporates two high voltage gate drivers which help to drive the MOSFETs or IGBTs. Each of these gate drivers has an individual differential current transducer (ICT) to control the drive current. Every ICT provides accurate control over the current, freeing the user from the hassle of manually tuning the drive current. Furthermore, the device delivers up to 40A of gate current, which makes it suitable for many applications such as in motor control, lighting, and solar inverters.

The IRS21281STRPBF offers a wide range of applications and can also be used in high voltage environments. Its integrated bi-directional DC-DC converter provides reliable and rugged output as well its high current drive capabilities make it suitable for automobiles, industrial equipment and other applications. It also has a slew rate control circuit which allows fast turn-on and turn-off times, which makes it ideal for the applications in MOSFETs or IGBTs switching. Its integrated high voltage gate drivers make it great for many applications such as motor controls, lighting and solar inverters. Furthermore, the integrated current transducers help the device to accurately control the drive current, making it incredibly useful for any application.

The specific data is subject to PDF, and the above content is for reference

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