IRS2330DSPBF

Current - Peak Output (Source, Sink):	250mA, 500mA
Base Part Number:	IRS2330DSPBF
Supplier Device Package:	28-SOIC
Package / Case:	28-SOIC (0.295", 7.50mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	80ns, 35ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.2V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	6
Channel Type:	3-Phase
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRS2330DSPBF is a high-power gate driver from Infineon Technologies. It is a 7-channel monolithic gate driver with isolated, floating outputs, and ±100V gate-source voltage rating. It is designed for applications in industrial, automotive, and aerospace fields. This device is suitable for use with a variety of high-power MOSFET and IGBT technologies for motor control, power conversion, motor/load phase shifting, and other high-power applications. The device\'s unique functionalities are well-suited for applications such as motor control, power conversion, motor/load phase shifting, and other high-power applications.

Features

The device features integrated isolation up to 2500 Vrms and a wide input range of up to 30 V, thereby providing isolation and protection against short-circuits, load-ringing, and ESD. It also provides switch-to-switch isolation of up to ±100 V, reducing the need for external components. The IGBT driver and the associated motor controller include a built-in control circuit with a switch current limit and a unique fault protection circuit. This allows for very fast switching transitions, thereby improving system efficiency and reducing electromagnetic and acoustic noise. The device features an integrated timer that can be used to adjust the switching frequency accurately and thus prevent destructive heat generation or system stability issues.

Applications

The IRS2330DSPBF gate driver is suitable for many applications, including electric motors, variable speed drives, electric generators, traction, and drives. The IGBT driver is also suitable for high-power applications such as renewable energy, UV control, and lighting applications. The device provides improved efficiency and lower losses due to the combination of its high-voltage, wide input range, and low on-resistance characteristics. Additionally, due to its low current consumption, the IRS2330DSPBF gate driver can be used in energy-specific applications such as energy harvesting and smart grid applications. Furthermore, its high reliability makes it suitable for systems with extended temperature ranges.

Working principle

The IRS2330DSPBF gate driver works by controlling the voltage across the gate of an IGBT or MOSFET. The gate voltage of an IGBT or MOSFET controls the switching speed of the device, and the IRS2330DSPBF gate driver allows the voltage to be controlled precisely. The driver accepts an input logic signal, which is used to regulate the output gate charge and discharge current. The output gate current is determined by the input logic signal level, the gate-source voltage, and the power device resistance. The gate charge and discharge cycle time is determined by the input logic waveform. The gate driver also features a current limit control, which helps to prevent device latch-up and guarantees that the power semiconductor device is not damaged by overcurrent.

Conclusion

The Infineon IRS2330DSPBF is a powerful 7-channel monolithic gate driver with isolated, floating outputs, and ±100V gate-source voltage rating. The driver enables a wide range of applications in motor control, power conversion, motor/load phase-shifting, and other high-power applications. The device’s high-voltage, wide input range, and low on-resistance characteristics reduce losses and improve efficiency. The built-in control circuit and fault protection circuit provide fast switching transitions, current limit control, and protection against device latch-up. The device’s 2500 Vrms isolation and wide input range up to 30 V also provide protection against short-circuits and load-ringing. The device is very reliable and can be used in system with extended temperature range.

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